Iron on GaN(0001) pseudo-1 × 1 (1+112) investigated by scanning tunneling microscopy and first-principles theory

Abstract

We have investigated sub-monolayer iron deposition on atomically smooth GaN(0001) pseudo-1 × 1 (1+112). The iron is deposited at a substrate temperature of 360 °C, upon which reflection high energy electron diffraction shows a transformation to a 3×3-R30° pattern. After cooling to room temperature, the pattern transforms to a 6 × 6, and scanning tunneling microscopy reveals 6 × 6 reconstructed regions decorating the GaN step edges. First-principles theoretical calculations have been carried out for a range of possible structural models, one of the best being a Ga dimer model consisting of 2/9 monolayer of Fe incorporated into 7/3 monolayer of Ga in a relaxed but distorted structure.

Interface formation for a ferromagnetic/antiferromagnetic bilayer system studied by scanning tunneling microscopy and first-principles theory

“…For example, many recent studies focused on the growth and properties of Fe on topological insulators, 4d transition-metal surfaces, wide band-gap semiconductors, and carbon-based materials such as C 60 and graphene. [1][2][3][4][5][6] Clearly of great importance to any material system is how the Fe grows and couples magnetically to it. This is of fundamental importance to the field of magnetic exchangebias systems [7,8] which are ubiquitous in modern magnetic recording technology, since the discovery of giant magneto-resistance.…”