Iron‐Fragment‐Substituted Heterosiloxanes of Gallium [Cp(OC)2Fe−SiR2OGaR′2]2(R, R′ = Alkyl, Aryl) − Structures of [Cp(OC)2Fe−SiR2OGaMe2]2(R = Me, Ph)

Malisch, Wolfgang; Schumacher, Dirk; Schmiedeskamp, Bernd; Jehle, Heinrich; Eisner, Dirk; Schoeller, Wolfgang W.; Nieger, Martin

doi:10.1002/ejic.200200598

Cited by 6 publications

References 30 publications

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Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH₃ Terminated Silica Surfaces

Dettenrieder

Dietrich

Maichle‐Mößmer

et al. 2016

Chemistry A European J

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Surface organometallic chemistry (SOMC) on silica materials is a prominent approach for the generation of highly active heterogenized polymerization catalysts. Despite advanced methods of characterization, the elucidation of the catalytically active surface species remains a challenging task. Alkylated rare-earth metal siloxide complexes can be regarded as molecular models of respective covalently bonded alkylated surface species, primarily used for 1,3-diene polymerization. Here, we performed both salt metathesis reactions of [Y(MMe4 )3 ] (M = Al, Ga) with [K{OSi(OtBu)3 }] and alkylation reactions of [Y{OSi(OtBu)3 }3 ]2 with AlMe3 . The obtained complexes [Y(CH3 )[(AlMe2 ){OSi(OtBu)3 }2 ](AlMe4 )]2 , [Y(CH3 )[(AlMe2 ){OSi(OtBu)3 }2 ]-{OSi(OtBu)3 }], [Y{OSi(OtBu)3 }3 (μ-Me)Y(μ-Me)2 Y{OSi(OtBu)3 }2 (AlMe4 )], and [Y(CH3 )(GaMe4 ){OSi(OtBu)3 }]2 represent rare examples of organoyttrium species with terminal methyl groups. The formation and purity of the mixed methyl/siloxy yttrium complexes could be enhanced by treating [Y(MMe4 )3 ] with [K(MMe2 ){OSi(OtBu)3 }2 ]n (M=Al: n=2; M=Ga: n=∞). Complexes [K(MMe2 ){OSi(OtBu)3 }2 ]n were obtained by addition of [K{OSi(OtBu)3 }] to [Me2 M{OSi(OtBu)3 }]2 . Deeper insight into the fluxional behavior of the mixed methyl/siloxy yttrium complexes in solution was gained by (1) H and (13) C NMR spectroscopic studies at variable temperature and (1) H-(89) Y HSQC NMR spectroscopy.

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Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH₃ Terminated Silica Surfaces

Dettenrieder

Dietrich

Maichle‐Mößmer

et al. 2016

Chemistry A European J

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From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin‐Film Field‐Effect Transistors

2012

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The syntheses, structural characterization, and thermal degradation of a series of the new indium and gallium siloxide dimers [{Me2In(OSiEt3)}2] (1), [{Me2Ga(OSiEt3)}2] (2), [{Me2In(OSi(OtBu)3)}2] (3), [{Me2Ga(OSi(OtBu)3)}2] (4), and In[OSi(OtBu)3)] (5) is reported. Compounds 1–4 are readily accessible by facile Brönsted reaction of InMe3 or GaMe3 with the corresponding silanols Et3SiOH and (tBuO)3SiOH, respectively. Compound 5 could be obtained by analogous protolysis of [In{N(SiMe3)2}3] with an excess amount of (tBuO)3SiOH. The suitability of 1–5 to serve as molecular precursors for low‐temperature synthesis of amorphous indium and gallium oxide for electronic applications was probed. Thus their thermal degradation was studied by Thermogravimetric/differential thermogravimetry analysis (TGA/DTG). Compounds 1–4 were decomposed under dry synthetic air (20 % O2, 80 % N2) at low temperature to yield amorphous indium oxide and gallium oxide particles, respectively. In contrast, thermal degradation of 5 affords amorphous indium silicate. All of these products were analyzed by multiple techniques including powder X‐ray diffraction analysis (PXRD), transmission electron microscopy (TEM), and energy dispersive X‐ray spectroscopy (EDX). Thin‐film field‐effect transistors (FETs) could be fabricated through spin‐coating of silicon‐wafers with solutions of 1 in toluene and subsequent calcination under dry synthetic air at 350 °C. These films exhibit very good FET performance with a field‐effect mobility of 3.0×10−1 cm2 V−1 s and an on/off current ratio of 108.

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Compounds with Bonds between Silicon and d-Block Metal Atoms

Housecroft

2007

Comprehensive Organometallic Chemistry III

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Iron‐Fragment‐Substituted Heterosiloxanes of Gallium [Cp(OC)₂Fe−SiR₂OGaR′₂]₂(R, R′ = Alkyl, Aryl) − Structures of [Cp(OC)₂Fe−SiR₂OGaMe₂]₂(R = Me, Ph)

Cited by 6 publications

References 30 publications

Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH₃ Terminated Silica Surfaces

Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH₃ Terminated Silica Surfaces

From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin‐Film Field‐Effect Transistors

Compounds with Bonds between Silicon and d-Block Metal Atoms

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Iron‐Fragment‐Substituted Heterosiloxanes of Gallium [Cp(OC)2Fe−SiR2OGaR′2]2(R, R′ = Alkyl, Aryl) − Structures of [Cp(OC)2Fe−SiR2OGaMe2]2(R = Me, Ph)

Cited by 6 publications

References 30 publications

Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH3 Terminated Silica Surfaces

Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH3 Terminated Silica Surfaces

From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin‐Film Field‐Effect Transistors

Compounds with Bonds between Silicon and d-Block Metal Atoms

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Iron‐Fragment‐Substituted Heterosiloxanes of Gallium [Cp(OC)₂Fe−SiR₂OGaR′₂]₂(R, R′ = Alkyl, Aryl) − Structures of [Cp(OC)₂Fe−SiR₂OGaMe₂]₂(R = Me, Ph)

Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH₃ Terminated Silica Surfaces

Yttrium Siloxide Complexes Bearing Terminal Methyl Ligands: Molecular Models for Ln−CH₃ Terminated Silica Surfaces