2018
DOI: 10.1002/cctc.201701965
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Iron‐Doped Bismuth Tungstate with an Excellent Photocatalytic Performance

Abstract: The metal‐doping of Bi‐based oxide photocatalysts to enhance the photocatalytic performance has been a research hotspot in recent years, but the research on the mechanism of doping‐induced photoactivity improvement is still incomplete. To illustrate the mechanism completely and clearly, Fe‐doped Bi2WO6, as an example, was synthesized by a facile hydrothermal route. Fe‐doped Bi2WO6 exhibits a much higher photoactivity than pure Bi2WO6 in the degradation of Rhodamine B (RhB) and salicylic acid (SA). By replacing… Show more

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Cited by 51 publications
(18 citation statements)
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References 60 publications
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“…The deposition and doping of metallic elements could change the photocatalytic properties mainly in the following two aspects. First, when metal ions enter the lattice, they will change the crystallinity of the Bi‐based photocatalysts or introduce defects, so as to enhance the absorption properties of light and the separation efficiency of photogenerated charges 137‐140 . For instance, Regmi et al synthesized Fe‐doped BiVO 4 with the in‐gap state between the valence band and conduction band of BiVO 4 , resulting in enhancing electron‐hole separation and improving the absorption capacity of visible light.…”
Section: Structural Tuning Of Bismuth‐based Photocatalytic Materialsmentioning
confidence: 99%
“…The deposition and doping of metallic elements could change the photocatalytic properties mainly in the following two aspects. First, when metal ions enter the lattice, they will change the crystallinity of the Bi‐based photocatalysts or introduce defects, so as to enhance the absorption properties of light and the separation efficiency of photogenerated charges 137‐140 . For instance, Regmi et al synthesized Fe‐doped BiVO 4 with the in‐gap state between the valence band and conduction band of BiVO 4 , resulting in enhancing electron‐hole separation and improving the absorption capacity of visible light.…”
Section: Structural Tuning Of Bismuth‐based Photocatalytic Materialsmentioning
confidence: 99%
“…The value of n decides the type of electronic transition in a semiconductor ( n =1 for direct transition and n =4 for an indirect transition). For Bi 2 WO 6 , it is confirmed the value of n is 4 . Figure b shows the plots of hν versus ( αhν ) 0.5 .…”
Section: Resultsmentioning
confidence: 99%
“…Because of its localized surface plasmon resonance effect (Braik et al 2021;Sinha 2021;Debnath et al 2021), the Co dopant can act as an electron reservoir and delayed the recombination of photoinduced charge carriers as validated by the results of the PL investigation. Also, the conversion between Co 3+ and Co 2+ (1.81 V vs NHE) gives priority to capture electrons, hence can inhibit electron-hole pair recombination (Hu et al 2018). Based on the results of the radical quenching studies, the • O2 − radicals and the photogenerated charge carriers can either directly degrade the adsorbed MZ or react with H2O2 in the system to form • OH radicals, as represented in Eqs.…”
Section: Active Radicals Trapping Test and Metronidazole Uv-catalytic Degradation Mechanismmentioning
confidence: 99%