Iron distribution in the implanted silicon under the action of high-power pulsed ion and laser beams

Morphological, structural and luminescence properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE

“…In recent years considerable attention has been paid to the formation of isolated precipitates and continuous layers of semiconducting iron disilicide (β-FeSi 2 ) in Si due to the possibility of application of β-FeSi 2 in optoelectronics as a light emitter in the 1.5-1.6 µm range. The main methods for 4 Author to whom any correspondence should be addressed. the formation of β-FeSi 2 are Fe + implantation in Si [1] and reactive deposition epitaxy of Fe layers followed by molecular beam epitaxy (MBE) of Si layer [2].…”

Features of the pulsed treatment of silicon layers implanted with erbium ions

“…We note that channeling in the Si region after PIBT is less pronounced in this case; this indicates a certain disorder in the implanted layer, which can be associated with the polycrystalline structure of Si and erbium silicides. The prevalence of diffusion processes over segregation ones and silicide formation at high concentrations of a poorly soluble impurity was also observed in the Si-Fe system during pulsed treatments [7].…”

Formation of Si-based light-emitting structures by ion implantation and pulsed treatments

“…We note that channeling in the Si region after PIBT is less pronounced in this case; this indicates a certain disorder in the implanted layer, which can be associated with the polycrystalline structure of Si and erbium silicides. The prevalence of diffusion processes over segregation ones and silicide formation at high concentrations of a poorly soluble impurity was also observed in the Si-Fe system during pulsed treatments [10].…”

“…We also observed the cellular structures with the Si cell sizes of 30-250 nm depending on the implant dose and the pulse energy density. Moreover, it was established that depending on the Fe atom concentration either the segregation of the dopant to the surface or diffusion into Si takes place [10]. PL measurements at 77 K of Fe-implanted Si sample ( = 10 16 cm -2 ) revealed the intense PL peak at 0.786 eV (1.57 m) originating from the interband transitions within the -FeSi 2 bandgap (Fig.…”

“…It is necessary to note that there is a limited number of publications concerning the creation of Si:Er andFeSi 2 layers by pulsed treatments [3][4][5][6][7]. Our group deals with 978-1-4244-3815-0/09/$25.00 ©IEEE the formation of Si-based light-emitting layers ( -SiC, -FeSi 2 , Si:Er) by ion implantation and pulsed treatments for ten years [8][9][10][11][12]. In this paper, the recent results for the formation of Si:Er and -FeSi 2 layers under the pulsed treatments are reviewed.…”