Ir₆In₃₂S₂₁, a polar, metal-rich semiconducting subchalcogenide

Abstract

Subchalcogenides are uncommon, and their chemical bonding results from an interplay between metal–metal and metal–chalcogenide interactions.

The Subchalcogenides Ir2In8Q (Q = S, Se, Te): Dirac Semimetal Candidates with Re-entrant Structural Modulation

“…[18][19][20][21][22] Ternary and multinary subchalcogenides promise an even greater degree of structural diversity with novel structure types and metal-rich substructures. 11,[23][24][25] The main challenge with the development of new complex subvalent chalcogenides, however, has been in their synthesis. 20,[26][27][28] Whereas flux-based methodologies for new materials are known for chalcogenides and intermetallics, it is especially challenging to find proper synthetic conditions that more reliably favor paths to subvalent chalcogenides.…”

“…Ruck and co-workers have done extensive work into developing methodology for ternary bismuth subhalides. − The synthetic methodology and bonding behavior of subchalcogenides, however, is not fully understood. Many reported examples can form polar covalent bonds between the chalcogen and the metal atoms while still forming a partially oxidized, metal-rich structure, such as the cases of binary Ta 6 S, Zr 9 S 2 , and Nb 14 S 5 . − Ternary and multinary subchalcogenides promise an even greater degree of structural diversity with novel structure types and metal-rich substructures. ,− …”

Enabling High Dielectric Response in PVDF/V2C MXene–TiO2 Composites Based on Nontypical V–F–Ti Bonding and Fermi-Level Overlapping Mechanisms

“…The highest position of peaks of TiO 2 corresponded to ∼1 eV of the conduction band (near Fermi level E F ). 46 The highest position of the peaks of F-bearing V 2 C corresponded to ∼1 eV of the conduction band as well (near Fermi level E F ). Here, the total diagram of DOS of atoms was achieved by the superposition of the results of TiO 2 and Fbearing V 2 C. Interestingly, similar curves showing Fermi peaks were found in TiO 2 and F-bearing V 2 C. Thus, combining TiO 2 onto V 2 C might enhance the contribution of electrons of Fbearing V 2 C at the Fermi level.…”

“…In Figure a, the results of the density of states (DOS) of atoms for varied elements in the V 2 C–TiO 2 structure bearing F were obtained. The highest position of peaks of TiO 2 corresponded to ∼1 eV of the conduction band (near Fermi level E F ) . The highest position of the peaks of F-bearing V 2 C corresponded to ∼1 eV of the conduction band as well (near Fermi level E F ).…”

Ionic Liquid‐Driven Formation of and Cation Exchange in Layered Sulfido Stannates – a CH2 Group Makes the Difference

“…The optoelectronic properties of chalcogenido (semi)metalate compounds can be fine-tuned by different approaches. One approach is the introduction of further elemental componentsother types of (semi)metal or chalcogen atoms -in order to change the charger carrier concentration, [1][2][3][4][5][6] such as done in compounds comprising the cluster ions [M x E y Ch 18 ] zÀ (M = Ga, In; E = Ge, Sn; x + y = 10, Ch = S, Se), [M 10 S 18 ] 6À (M = Ga, In), or [Zn 25 In 31 S 84 ] 25À , [7][8][9] for instance. Another approach is the change of the chalcogenido metalate network structure (with or without alteration of the network composition), which has an impact on the electronic band structure, as well.…”