IR laser-induced decomposition of hexamethyldisiloxane for chemical vapour deposition of nano-structured hydrido(methyl)silicone powders

Kupčı́k, Jaroslav; Bastl, Zdeněk; Šubrt, Ján; Pola, Josef; Papadimitriou, Vassileios C.; Prosmitis, Alexandros V.; Papagiannakopoulos, Panos

doi:10.1016/s0165-2370(00)00109-1

Cited by 13 publications

(3 citation statements)

References 16 publications

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“…[64] Similar to the multiphoton IR laser photolysis of HMDSO, substantial redistribution (or "scrambling") of the substituents on silicon atoms takes place, along with the formation of Si-H as well as Si-CH 2 -Si moieties. [65] The same is observed upon pyrolysis of a gel obtained by cohydrolysis of dimethyldiethoxysilane and tetraethoxysilane. Possible redistribution reactions, in the nomenclature introduced above, between Si units are as follows: D + Q → 2 T, 2 D → M + T, and D + T → M + Q.…”

Section: Film Formation By Deposition Of Pmds +mentioning

confidence: 59%

Evidence of ionic film deposition from single‐filament dielectric barrier discharges in Ar–HMDSO mixtures

Bröcker

Perlick

Klages

2020

Plasma Processes & Polymers

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The short residence time of Ar-HMDSO (Ar-hexamethyldisiloxane) gas mixtures rapidly flowing across atmospheric-pressure, glow-type, single-filament dielectric barrier discharges is utilized to accomplish thin-film deposition via a purely ionic route. A comparison of thin-film volumes obtained from profilometry, on the one hand, and from the transferred charge, on the other hand, enables to evaluate the mass of the ions contributing to the film growth. For HMDSO fractions at the lower end of the studied range of molar fractions, 50 ppm, pentamethyldisiloxanyl cations (Me 3 SiOSiMe 2 + , PMDS +), generated from the monomer via Penning ionization by Ar(1s) species, are mainly responsible for film formation. For HMDSO fractions growing beyond 1,000 ppm, ionic oligomerization processes by reactions of PMDS + with HMDSO molecules result in a 2.5-fold increase of the average deposited ion mass.

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Section: Film Formation By Deposition Of Pmds +mentioning

confidence: 59%

Evidence of ionic film deposition from single‐filament dielectric barrier discharges in Ar–HMDSO mixtures

Bröcker

Perlick

Klages

2020

Plasma Processes & Polymers

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“…Besides, studies in microwave discharge using direct electron cyclotronic resonance (DECR) have shown that a large production of hydrocarbon molecules is evidence of CSi bond breaking in HMDSO plasma 3–5. Additionally, the HMDSO dissociation may also lead to other organosilicon species 6…”

Section: Introductionmentioning

confidence: 99%

FTIR Plasma Phase Analysis of Hexamethyldisiloxane Discharge in Microwave Multipolar Plasma at Different Electrical Powers

Raynaud¹,

Despax²,

Ségui³

et al. 2004

Plasma Processes & Polymers

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Summary: In this paper, the gas phase composition of hexamethyldisiloxane (HMDSO) microwave plasma at 4 × 10−3 mbar and of the corresponding films were studied by FTIR spectroscopy under different power conditions. At low powers, species with a chemical structure very similar to that of HMDSO were observed in the gas phase, whereas the film essentially contained short [(CH3)2SiO]n‐like chains with a low branching rate and the end group Si(CH3)3. At higher powers, the chemical entities present in the gas phase contained several (SiO)x bonds, whereas the branching rate in the film increased with the amount of SiH, SiC and SiO bonds. The interpretation of these observations led to a proposal involving a chemical mechanism. In this mechanism, the increasing decomposition of HMDSO into by‐products, which themselves increasingly decompose as the power is raised, plays a determining role.

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“…Apparently, such a spectrum reflects a complex composition of the gas phase formed by a large number of molecules with various chemical bonds: Si-O-Si (1000-1100 cm −1 , Si-C-Si and Si-O-C (900-1100 cm −1 3 9 and Si-C in the range of 800 cm −1 . 23 The HMDSO pyrolysis study demonstrates [24][25][26] that the transformation begins with the siloxane bonds break with formation of a silyl radical and a silanone molecule:…”

Section: Resultsmentioning

confidence: 99%

A Study of Pyrolysis of Polymethylsiloxanes by Fourier Transform Infrared

Alexandrov¹,

La²,

As³

2011

J. Nanosci. Nanotech.

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This paper is dedicated to a comparative study of pyrolysis of decamethylcyclopentasiloxane and hexamethyldisiloxane, widely used as precursors for CVD of silicon dioxide films. The pyrolysis process was carried out in a hot-wall horizontal tube reactor made from quartz within the temperature range 25-1000 degrees C. FTIR spectroscopy has been used for the analysis of gaseous reaction products in the exhaust line of the reactor. It has been found that transformation of DMPSO was initiated by the open ring in the precursor molecules with its further transformation to linear biradicals followed by the chain's growth due to radical reactions. HMDSO transformation is connected with separation of silanon, silyl and methyl radicals with following multi-type interactions of siloxane radicals and formation of non-rigorously organized three-dimensional molecules.

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IR laser-induced decomposition of hexamethyldisiloxane for chemical vapour deposition of nano-structured hydrido(methyl)silicone powders

Cited by 13 publications

References 16 publications

Evidence of ionic film deposition from single‐filament dielectric barrier discharges in Ar–HMDSO mixtures

Evidence of ionic film deposition from single‐filament dielectric barrier discharges in Ar–HMDSO mixtures

FTIR Plasma Phase Analysis of Hexamethyldisiloxane Discharge in Microwave Multipolar Plasma at Different Electrical Powers

A Study of Pyrolysis of Polymethylsiloxanes by Fourier Transform Infrared

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