Ionizing Radiation Detection Using the Field Effect Transistor Based on Reduced Graphene Oxide
I. B. Olenych,
Yu. Yu. Horbenko,
L. S. Monastyrskii
et al.
Abstract:In this study, the graphene field-effect transistor (FET) has been created by depositing a film-forming suspension of reduced graphene oxide (RGO) on the silicon substrate with a SiO2 layer and air-drying at room temperature. The possibility of using the obtained FET for ionizing radiation detection was investigated. The electrical characteristics of the radiation sensor based on the RGO film were studied in modes of direct current and alternating current. The dependencies of the drain current and the resistan… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.