Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

Wang, Chen-Hui; Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao; Wang, Zhikuan

doi:10.1016/j.nima.2016.05.083

Cited by 12 publications

(16 citation statements)

References 10 publications

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“…To focus on the latter case, we consider a sequential neutron and γ-ray configuration as most previous works have done. [7][8][9]11 The processes of the sequential neutron and γ-ray irradiation experiments for PNP transistor are shown in Fig. 2 (a).…”

Section: A Experimental Setup To Explore the Behaviorsmentioning

confidence: 99%

“…Another two pure γ-ray irradiation conditions are used to obtain the artificial summed damage. This experimental setup is very different from existing experiments, 5,7,8,11 which usually consider only a fixed displacement fluence and ionization dose. For each condition, we use 2 chips (i.e., 8 PNP transistors) to avoid possible misleading due to sample-to-sample variability.…”

Section: A Experimental Setup To Explore the Behaviorsmentioning

confidence: 99%

“…However, recent experiments have clearly demonstrated that, when these bipolar transistors are simultaneously or subsequently irradiated by neutron and γ-ray, the practical damage is usually smaller or larger than the simple sum of DD and ID [5][6][7][8][9][10][11][12][13] . These phenomena can be called as irradiation synergistic effects (ISEs), which are negative in PNP transistors and positive in NPN transistors, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review

Song,

Wei

2020

Preprint

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The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between the practical and summed damages, indicating significant irradiation synergistic effects (ISEs). Understanding the behaviors and mechanisms of ISEs is essential to predict the practical damages. In this work, we first make a brief review on the state of the art, critically emphasizing on the difficulty encountered in previous models to understand the dose rate dependence of the ISEs. We then introduce in detail our models explaining this basic phenomenon, which can be described as follows. Firstly, we show our experimental works on PNP and NPN transistors. A variable γ-ray dose and neutron fluence setup is adopted. Fluence dependent 'tick'-like and sublinear dose profiles are observed for PNP and NPN transistors, respectively. Secondly, we describe our theoretical investigations on the positive ISE in NPN transistors. We propose an atomistic model of transformation and annihilation of V 2 defects in p-type silicon under ionization irradiation, which is totally different from the traditional picture of Coulomb interaction of oxide trapped charges in silica on charge carriers in irradiated silicon. The predicted novel dose and fluence dependence are fully verified by the experimental data. Thirdly, the mechanism of the observed negative ISE in PNP transistors is investigated in a similar way as in the NPN transistor case. The difference is that in p-type silicon, VO defects also undergo an ionization-induced transformation and annihilation process. Our results show that, the evolution of displacement defects due to carrier-enhanced defect diffusion and reaction is the dominating mechanism of the ISEs. Finally, we give a perspective on future investigations on the ISEs when the displacement and ionization irradiations are present simultaneously.

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Section: A Experimental Setup To Explore the Behaviorsmentioning

confidence: 99%

Section: A Experimental Setup To Explore the Behaviorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review

Song,

Wei

2020

Preprint

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“…en, they tested the deep-level transient spectrum of defects and found that the two types of damages are not working individually [1,2]. Based on simulations and experiments, Wang et al discovered the gain degradation caused by mixed neutrons and gamma rays on lateral PNP transistors is greater than the simple sum of the DD and TID [3][4][5]. ey all illustrated that TID effects could enhance DD effects.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

Shan

Liu

Zheng

et al. 2022

Science and Technology of Nuclear Installations

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Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage caused by mixed neutrons and gamma rays are simulated. The results demonstrate that the synergistic effects are more serious than the simple sum of the two radiation effects due to their mutual enhancement. The change of the carrier recombination rate in the device at different positions shows that the displacement effects increase the peak value of surface recombination rate; meanwhile, the ionizing dose effects enhance the recombination process in bulk silicon. The mechanism of this phenomenon is that positive charges from the oxide layer and interface enhance the recombination of carriers in bulk, and the reduced carrier lifetime caused by defects from bulk makes carriers more likely to be trapped by the interface traps. In addition, the simulation result which shows the influence of temperature on the synergistic effects indicates that the synergistic effects are more sensitive to the lower temperature.

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“…In an environment with both gamma ray and neutron radiations, it is often assumed that the total damage is a simple sum of ID and DD. However, recent experiments have demonstrated that, the total damage in bipolar devices could be either smaller or bigger than the simple sum of ID and DD, that is, there is a negative or positive synergistic effect [1][2][3][4][5][6][7][8][9][10][11][12] . However, the underlying mechanism of the synergistic effects is still not clear.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Song

Zhang

Liu

et al. 2019

ACS Appl. Electron. Mater.

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The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a 'tick'-like dependence on the gamma ray dose after the samples are radiated by neutrons. Two negative synergistic effects are derived, both of which have similar magnitudes as the ionization damage (ID) itself. The first one depends linearly on the gamma ray dose, whose slope depends quadratically on the initial displacement damage (DD) and can be attributed to the healing of neutron-radiation-induced defects in silicon. The second one has an exponential decay with the gamma ray dose, whose amplitude shows a rather strong enhanced low-dose-rate sensitivity (ELDRS) effect and can be attributed to the passivation of neutron-induced defects near the silica/silicon interface by the gamma-ray-generated protons in silica, which can penetrate the silica/silicon interface to passivate the neutron-induced defects in silicon. The simulated results based on the proposed model match the experimental data very well, but differ from previous model, which does not assume annihilation or passivation of the displacement defects. The unraveled defect annealing mechanism is important because it implies that displacement damages can be repaired by gamma ray radiation or proton diffusion, which can have important device applications in the space or other extreme environments. Unirradiated Samples Fluence: 0 n/cm 2 Fluence: 2 10 13 n/cm 2 Fluence: 3 10 13 n/cm 2 Fluence: 5 10 13 n/cm 2 LDR: 2.2mrad(Si)/s LDR: 2.2mrad(Si)/s LDR: 2.2mrad(Si)/s LDR: 2.2mrad(Si)/s HDR: 10rad(Si)/s HDR: 10rad(Si)/s HDR: 10rad(Si)/s HDR: 10rad(Si)/s Step 1:Neutron irradiation Step 2:Gamma irradiation FIG. 2. (color online) Flowchart of the neutron/gamma radiation experiments. For each of the eight radiation conditions, 2 chips with 8 PNP transistors are used.

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Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

Cited by 12 publications

References 10 publications

Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review

Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review

Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

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