Abstract:The theory of impurity-mediated free-carrier absorption in n-GaAs bulk material is extended to quasi-two-dimensional structures. The surfaces are treated within the classical infinite-barrier model and the electron-electron interaction within the random-phase approximation. Screening due to phonons is also considered. Using temperature-dependent Green's functions and starting from the Kubo formula a general expression is derived for the free-carrier absorption coefficient including both bulk and surface contri… Show more
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