Ionized donor bound excitons in GaN

Šantić, Branko; Merz, C. J.; Kaufmann, U.; Niebuhr, R.; Obloh, H.; Bachem, K. H.

doi:10.1063/1.119415

Cited by 67 publications

(38 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The deeper localized center DBX3 (E loc = 13±2 meV) exhibits a larger E act of 8.0±0.1 meV which describes the more rapid thermalization of DBX3. A similar thermalization behavior for DBX2 and DBX3 has been observed byŠantic et al 56 in nominally undoped and moderately Mg doped (4 × 10 17 cm −3 − 2 × 10 18 cm −3 ) GaN and suggests the attribution of DBX3 to the ionized donor bound exciton D + X which directly corresponds to the neutral state DBX2 (D 0 X). Interestingly, we observe an opposite scaling of E act for ABX1-3 over the corresponding E loc (Tab.…”

Section: Determination Of the Activation Energiessupporting

confidence: 50%

“…Fig. 7a exhibits a rather fast thermalization behavior of DBX3 (E act = 8.0±0.1 meV) in comparison to DBX2 (E act = 7.3±0.4 meV) which has also been observed byŠantic et al 56 in nominally undoped and moderately Mg doped (4 × 10 17 cm −3 − 2 × 10 18 cm −3 ) GaN. This allows the assignment of DBX3 to a D + X which corresponds to the neutral bound exciton state DBX2 (D 0 X).…”

supporting

confidence: 59%

“…clude in section VII that DBX3 presents an overlay of an ionized donor bound exciton (D + X) related to DBX2 as also observed byŠantic et al 56 and a deep donor bound exciton.…”

Section: Urbach Tailmentioning

confidence: 75%

See 2 more Smart Citations

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

View full text Add to dashboard Cite

Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

show abstract

Section: Determination Of the Activation Energiessupporting

confidence: 50%

supporting

confidence: 59%

See 1 more Smart Citation

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

View full text Add to dashboard Cite

show abstract

“…It has been suggested that the I X emission is due to the exciton bound to the ionized donor. 6,7 The (D + ,X) complex is more stable in systems with a smaller ratio of the electron and hole effective mass σ = m e /m h . 14 Maintaining the hole bound to the donor is the weak link in the stability of the (D + ,X) complex.…”

Section: Figure 2 Temperature Dependence Of the Integrated Pl Intensmentioning

confidence: 99%

“…This emission has been identified as a neutral acceptor-bound exciton (A 0 ,X) 3,4 or a neutral donor-bound exciton (D 0 ,X) 5 and more recently was assigned to an ionized donor-bound exciton (D + ,X). 6,7 The identification of the various emissions in GaN is essential to understanding and improving device performance via better dopants and more efficient luminescence.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Bound Exciton Emissions in GaN

Chtchekine

Gilliland

Feng

et al. 1999

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K) is found to be dominated by the release of a free exciton with thermal activation energy consistent with the exciton localization energy. At higher temperatures a second dissociation channel with activation energy E A = 28 ± 2 meV is observed. The dissociation of a bound exciton complex with exciton localization energy E X loc = 11.7 meV is also dominated by the release of a free exciton. In contrast to previous studies evidence is presented against the hypothesis of this emission being due to the exciton bound to an ionized donor. We find that it originates most likely from an exciton bound to a neutral acceptor.

show abstract

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields

Stępniewski¹,

Wysmołek

Potemski

et al. 1998

phys. stat. sol. (b)

View full text Add to dashboard Cite

Recent magnetoluminescence results obtained for homoepitaxial GaN layers are presented. The neutral impurity-bound excitons and donor±acceptor pair emission lines have been studied in magnetic fields up to 27 T. Low-temperature luminescence spectra have been measured with the magnetic field parallel and perpendicular to the hexagonal c-axis of the GaN layers. Experimental results allowed us to evaluate diamagnetic shifts, effective g-factors of electrons and holes involved in neutral donor and neutral acceptor complexes as well as the electron±hole exchange constant for close donor±acceptor pairs. Both the fine structure of the neutral acceptor-bound exciton emission and the specific properties of donor±acceptor pair spectra observed in magnetoluminescence experiments are tentatively attributed to the internal structure of the acceptor state.

show abstract

Ionized donor bound excitons in GaN

Cited by 67 publications

References 13 publications

Optical signature of Mg-doped GaN: Transfer processes

Optical signature of Mg-doped GaN: Transfer processes

Temperature Dependence of Bound Exciton Emissions in GaN

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields

Contact Info

Product

Resources

About