Ionization annealing of semiconductor crystals. Part one: theoretical background

Garkavenko, A. S.; Mokritskii, V. A.; Banzak, O. V.; Zavadskii, V. A.

doi:10.15222/tkea2014.4.50

Cited by 2 publications

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“…Наряду с высокими энергетическими параметрами, такой материал обладает большей оптической однородностью, поскольку роль собственных дефектов в условиях высокой концентрации свободных носителей заряда и в присутствии мелких легирующих примесей менее существенна [12,13]. Установлено, что легированные неоном методом ионной имплантации кристаллы CdS (N  10 18 см -3 ) обладали наиболее высокой однородностью свечения при сканировании пучком электронов вдоль грани резонатора (рис.…”

Section: экспериментальные результаты и обсуждениеunclassified

Role of Dislocations in the Process of Degradation of Semiconductor Lasers with Electronic Energy Pumping. Experimental Research

Garkavenko¹,

Mokritsky

Maslov

et al. 2020

Nauka teh.

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Light self-destruction-degradation of the second type has been observed in samples of semiconductor lasers with electronic energy pumping with high optical homogeneity and good quality of surface treatment. In these samples, damage appeared in the form of cords perpendicular to the ends of the resonator. According to the current understanding of the passage of powerful light streams through various media, the emergence of narrow light channels is due to the phenomenon of self-focusing. It refers to the fundamental physical mechanisms of propagation of laser radiation and is caused by nonlinear phenomena arising in a medium under the influence of high-power laser radiation. The physical reason for self-focusing is an increase in the refractive index n in a strong light field. Thermal self-focusing is the most probable cause of radiation redistribution in the active region of the crystal. However, it is possible that in the initial stage of the appearance of light channels a certain role is played by the growth of the intensity of radiation in certain sections of the crystal because of the instability of generation or small fluctuations in the pump current density. Then the process acquires an avalanche character, since the localization of the ray in the channel increases the density of light radiation which can lead to overheating of the substance and the activation of the thermal self-focusing mechanism. The experiments performed in this paper have shown that optically homogeneous crystals possess maximum resistance to degradation processes. In them, the critical power of light destruction is determined by the self-focusing threshold of radiation in a material. Since the nonlinear addition to the refractive index Δn = n2E2 at the self-focusing threshold is determined by the change in the concentration of non-equilibrium carriers ΔN(E2), the value of the maximum fluctuation DΔNmax itself is proportional to the value of the non-equilibrium carrier concentration at the generation threshold ΔNpores and the relative excess of the generation threshold J = (j – jn)/jn. Thus, a low threshold concentration of non-equilibrium carriers is one of the conditions for increasing material resistance to degradation processes. In doped crystals ΔNpores is less than in pure materials. This, perhaps, explains the rather higher value of Pcritial in the optimally doped homogeneous n-GaAs. Smaller values of Pcritial in p-type samples doped with zinc can be associated not only with the inhomogeneity of these crystals, but also with large generation thresholds. In addition, the cross section for absorption of radiation by holes is about 3–4 times larger than by electrons, which can also reduce the self-destruction threshold of lasers. At Т = 300 K, the lasing thresholds are higher that naturally reduces the value of the self-focusing threshold.

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Section: экспериментальные результаты и обсуждениеunclassified

Role of Dislocations in the Process of Degradation of Semiconductor Lasers with Electronic Energy Pumping. Experimental Research

Garkavenko¹,

Mokritsky

Maslov

et al. 2020

Nauka teh.

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Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background

Garkavenko¹,

Mokritskii

Maslov

et al. 2020

Nauka teh.

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. Catastrophic degradation takes place in case of reaching critical values of laser radiation density power in semiconductor lasers with electronically pumped energy made from single crystals of some compounds. It has been accompanied by mechanical destruction of the surface at resonator ends, an irreversible decrease in radiation power and an increase in generation threshold. Moreover, during the catastrophic degradation of semiconductor lasers under the action of intrinsic radiation, significant changes in the crystal structure occur within the single crystal: dislocation density reaches a value more 1012–1015 cm–2. It has been shown that initial density of dislocations and critical power density of the intrinsic radiation are inversely proportional. Thus, the degradation process of semiconductor lasers is directly related to generation and multiplication of dislocations during laser operation. Mechanical destruction of a crystal lattice occurs at critical values of laser radiation power and dislocation density. To clarify the proposed mechanism for the degradation of semiconductor lasers, it is necessary to take into account an effect of dislocations on optical properties of semiconductors. Typically, this effect is considered as follows: dislocations cause an appearance of a local deformation field and, in addition, form space-charge regions that surround a dislocation core in the form of a charged tube. The paper proposes a model of the phenomenon under study: large stresses arise in the dislocation core, leading to a displacement of individual atoms and deformation of the crystal lattice. Lattice deformation in the dislocation core leads to a local change in the width of a forbidden band. This change value is about 10–2 eV for a screw dislocation and 10–1 eV for a boundary dislocation. The mechanism of this change is that aforementioned deformation leads to a multiple rupture of electronic bonds and an increase in the electron concentration in the dislocation core to approximately value 1018 cm–3. The developed analytical model of the degradation mechanism allows to perform selection of a semiconductor and estimation of a laser operating mode under conditions of increased radiation power.

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Ionization annealing of semiconductor crystals. Part one: theoretical background

Cited by 2 publications

References 1 publication

Role of Dislocations in the Process of Degradation of Semiconductor Lasers with Electronic Energy Pumping. Experimental Research

Role of Dislocations in the Process of Degradation of Semiconductor Lasers with Electronic Energy Pumping. Experimental Research

Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background

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