1998
DOI: 10.1016/s0167-2738(97)00470-0
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Ionic transport mechanisms in oxide based glasses in the supercooled and glassy states

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Cited by 42 publications
(18 citation statements)
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“…The electrical conduction process can be attributed to the ability of the charge carriers to move freely or become more mobile. On the other hand, dependence of the electrical conduction process of sodium silicate glasses on temperature was reported by Souquet et al [16]. The electrical conduction showed two processes of an activated jump mechanism at low temperature and of a free volume cooperative mechanism above the vitreous temperature.…”
Section: Polarization and Depolarization Mechanisms Indicated By P1 Amentioning
confidence: 75%
See 1 more Smart Citation
“…The electrical conduction process can be attributed to the ability of the charge carriers to move freely or become more mobile. On the other hand, dependence of the electrical conduction process of sodium silicate glasses on temperature was reported by Souquet et al [16]. The electrical conduction showed two processes of an activated jump mechanism at low temperature and of a free volume cooperative mechanism above the vitreous temperature.…”
Section: Polarization and Depolarization Mechanisms Indicated By P1 Amentioning
confidence: 75%
“…The conduction process at higher temperatures than the glass transition of 540 C is reportedly to be related to the local deformations of the macromolecular chains [16]. The local deformation allows the transfer of defects to a neighbor position and the cationic mobility to be dominant.…”
Section: Polarization and Depolarization Mechanisms Indicated By P3mentioning
confidence: 99%
“…In glass-forming melts the temperature T 0 of eqn (5) is lower than the glass transition temperature T g (Souquet et al, 1998;Hasz and Moynihan, 1991). To determine the temperature range where the VTF law is applicable and, thus, to determine reliably the fit parameters B, and T 0 ( Table 2) we proceeded in two steps.…”
Section: Molten Statementioning
confidence: 99%
“…The temperature ( T ) dependence of the electrical conductivity (σ) below the glass transition temperature ( T g ) can be represented by an Arrhenius law. For silicate oxide glasses, a single‐jump diffusion mechanism is generally admitted 21,22 . In this hypothesis of diffusion mechanism, the variation of the product σ T with temperature is expressed through where the preexponential factor A is proportional to the charge carrier concentration, and E a is the activation energy associated with the transport mechanism.…”
Section: Introductionmentioning
confidence: 99%