Ionic conductivity of tetragonal ZrO2 polycrystal doped with TiO2 and GeO2

Yoshida, Hidehiro; Morita, Koji; Kim, Byung-Nam; Hiraga, Keijiro

doi:10.1016/j.jeurceramsoc.2008.06.016

Cited by 17 publications

(13 citation statements)

References 34 publications

(37 reference statements)

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“…For zirconia one can find first-principles molecular orbital calculations only for GeO 2 and TiO 2 doped samples. 13,42 Results of net charge calculations for Ge 4+ , Ti 4+ and O 2− (Table 5) are similar to those obtained in Refs. 13,42. The change of C 66 elastic values in function of dopant cation are not significant (Table 5).…”

Section: Discussionsupporting

confidence: 84%

Effect of cation doping on lattice and grain boundary diffusion in superplastic yttria-stabilized tetragonal zirconia

Boniecki

Natanzon

Łodziana

2010

Journal of the European Ceramic Society

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Section: Discussionsupporting

confidence: 84%

Effect of cation doping on lattice and grain boundary diffusion in superplastic yttria-stabilized tetragonal zirconia

Boniecki

Natanzon

Łodziana

2010

Journal of the European Ceramic Society

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“…The designing of grain boundary quantum structure will be of importance for fabricating high-performance ceramics in the near future, because the grain boundary structure often influences not only the superplasticity but also other matter transport phenomena such as sintering and ionic conduction. 59) In fact, the research and development of nanometer or sub-nanometer structure-controlled ceramics have been internationally started in recent years, and the importance of the grain boundary quantum structure is rapidly growing. For instance, the specific area research project of the Ministry of Education, Culture, Sports, Science and Technology, Japan, ''Nano Materials Science for Atomic-scale Modification'' was started in 2007.…”

Section: Toward Designing Of Grain Boundary Quantum Structure In Ceramentioning

confidence: 99%

High Temperature Grain Boundary Plasticity in Ceramics

Sakuma

Yoshida

2009

Mater. Trans.

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Superplasticity in fine-grained materials has been generally analyzed on the basis of their experimental strain rate-flow stress relationship. The phenomenological analysis based on a constitutive equation is effective for understanding the overall flow and fracture behavior and to speculate on the rate-controlling mechanism of superplastic flow. However, it has been recently pointed out that the high temperature superplastic flow and failure in ceramics is significantly influenced by the atomic structure and chemistry of grain boundary. Such phenomenon cannot be explained based on the classical phenomenological analysis. Our research group has therefore proposed to establish a new research field, grain boundary plasticity, to describe the superplastic deformation related to the grain boundary quantum structure. This paper aims to point out the importance of the quantum structure analysis of the grain boundary to understand the high temperature plasticity in ceramics.

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“…The microstructures in the PX172 and PX172‐G sintered at 1100°C–1150°C are essentially identical except for their chemical composition. Grain boundary segregation of the Y 3+ , Al 3+ , and Ge 4+ cations is also observed in the 3 mol% Y 2 O 3 ‐stabilized TZP, GeO 2 ‐doped TZP and 3YE submicron‐grain, sintered bodies based on HRTEM‐nanoprobe EDS and STEM‐EDS investigations. For instance, the 3YE sintered at 1300°C consisted of tetragonal phase and a small amount (<10%) of cubic phase; the Y 3+ cations uniformly dissolved inside tetragonal phase grains, and also segregated along the grain boundaries.…”

Section: Discussionmentioning

confidence: 95%

Low‐Temperature Superplasticity in Nanocrystalline Tetragonal Zirconia Polycrystal (TZP)

2012

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Nanocrystalline tetragonal ZrO2 polycrystals (TZP) have been fabricated by the pressureless sintering of recently developed tetragonal ZrO2 powder containing 5.69 mol% YO1.5 and 0.60 mol% AlO1.5. The average grain sizes were 160 nm in the TZP sintered at 1150°C for 10 h and 150 nm in the 0.25 mol% GeO2‐doped TZP sintered at 1100°C for 100 h. The TZP and Ge4+‐doped TZP‐sintered bodies were essentially single‐phase materials, and neither the amorphous layer nor the second‐phase particle was observed along the grain boundary faces. High‐resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM), and nanoprobe energy‐dispersive X‐ray spectrometer (EDS) measurements revealed that the Y3+, Al3+ and Ge4+ cations tend to segregate in the vicinity of the grain boundaries in the TZP‐sintered bodies. The TZP and Ge4+‐doped TZP exhibited an elongation to failure of more than 100% in the temperature range of 1150°C–1300°C and initial strain rate range of 1.4 × 10−5 s−1 to 1.0 × 10−2 s−1. For instance, an elongation to failure in the Ge‐doped TZP reached about 200% at 1150°C and 1.4 × 10−5 s−1. The nanocrystallization reduced the lower limit of the superplastic temperature of conventional, submicron‐grain TZP materials by 150°C. The improved ductility of the TZP at low temperatures was essentially attributed to the reduced grain size.

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Ionic conductivity of tetragonal ZrO2 polycrystal doped with TiO2 and GeO2

Cited by 17 publications

References 34 publications

Effect of cation doping on lattice and grain boundary diffusion in superplastic yttria-stabilized tetragonal zirconia

Effect of cation doping on lattice and grain boundary diffusion in superplastic yttria-stabilized tetragonal zirconia

High Temperature Grain Boundary Plasticity in Ceramics

Low‐Temperature Superplasticity in Nanocrystalline Tetragonal Zirconia Polycrystal (TZP)

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