1973
DOI: 10.1103/physrevb.8.4787
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Ionic Conduction in LaF3Thin Films

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Cited by 46 publications
(7 citation statements)
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“…The mea--surements were made on a thin crystalline wafer (d = 5 X lo@ m) by applying a step voltage, which is equivalent to a monofrequency measurement. Tiller et al [21] obtained such small activation enthalpies for polycrystalline evaporated LaF, films in the range 320-400 K by measuring dc currents as a function of temperature with a constant applied potential. For T < 320 K the activation enthalpy is 0.40 ?…”
Section: Discussionmentioning
confidence: 99%
“…The mea--surements were made on a thin crystalline wafer (d = 5 X lo@ m) by applying a step voltage, which is equivalent to a monofrequency measurement. Tiller et al [21] obtained such small activation enthalpies for polycrystalline evaporated LaF, films in the range 320-400 K by measuring dc currents as a function of temperature with a constant applied potential. For T < 320 K the activation enthalpy is 0.40 ?…”
Section: Discussionmentioning
confidence: 99%
“…Another structure that has been found to exhibit rapid anionic transport is the tysonite (LaF 3 ) which is used in fluoride ion selective electrodes. 87 Materials with this structure based on CeF 3 were found to have higher fluoride ion conductivity. 88 Lithium nitride also has a layered type structure but with a cationic conductivity.…”
Section: Materials With Layered Structuresmentioning
confidence: 97%
“…The early studies on thin solid electrochemical devices were made on fast anionic conductors such as rare-earth fluorides, e.g., LaF3, CeF3 [38][39][89][90], lead fluorides, e.g., PbF2, PbSnF4 [24][25][40][41]68,[91][92][93][94][95], doped zirconia, e.g., ZrOz-CaO, Zr02-Y 203, Zr02-MgO and doped ceria, e.g., Ce02-CaO, Ce02-Y 203 [5][6][7][8]16,37,[96][97], and L\-alumina [6,99].…”
Section: Anionic-conducting Thin-filmsmentioning
confidence: 99%
“…Lilly et al [39,90] have studied the transport properties on films of thickness 0.1-1 Jim. In these films the dominant charge carrier is thought to be an F"-ion hopping in vacancies created by the formation of Scottky defects.…”
Section: 1 Fluoride Thill-filmsmentioning
confidence: 99%