Ion transmission – new technique for analysis of ion tracks in polymers

Vacı́k, J.; Červená, J.; Hnatowicz, V.; Fink, D.; Apel, P. Yu.; Strauss, P.

doi:10.1016/s0168-583x(98)00458-3

Cited by 15 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An assumption is made that the irradiation by the 500 keV ions at a fluence of 10 11 -10 12 ions cm −2 has not modified this internal structure. A similar fitting process was used by Vacik et al [53] to ascertain the pore shape in nuclear tracks by comparing simulation with the experimental ion-transmission spectra. The ion count per iteration of the simulated ion energy spectrum was set at 10 5 ions and the incident beam width, centred on the collimating aperture, was set as the mean aperture width plus the mean lateral ion range plus straggle which reduced computational overheads by eliminating incident ions which had a very low probability of reaching the substrate.…”

Section: Simulation (500 Kev He Ions)mentioning

confidence: 99%

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

et al. 2013

View full text Add to dashboard Cite

Solid state electronic devices fabricated in silicon employ many ion implantation steps in their fabrication. In nanoscale devices deterministic implants of dopant atoms with high spatial precision will be needed to overcome problems with statistical variations in device characteristics and to open new functionalities based on controlled quantum states of single atoms. However, to deterministically place a dopant atom with the required precision is a significant technological challenge. Here we address this challenge with a strategy based on stepped nanostencil lithography for the construction of arrays of single implanted atoms. We address the limit on spatial precision imposed by ion straggling in the nanostencil-fabricated with the readily available focused ion beam milling technique followed by Pt deposition. Two nanostencils have been fabricated; a 60 nm wide aperture in a 3 μm thick Si cantilever and a 30 nm wide aperture in a 200 nm thick Si3N4 membrane. The 30 nm wide aperture demonstrates the fabricating process for sub-50 nm apertures while the 60 nm aperture was characterized with 500 keV He(+) ion forward scattering to measure the effect of ion straggling in the collimator and deduce a model for its internal structure using the GEANT4 ion transport code. This model is then applied to simulate collimation of a 14 keV P(+) ion beam in a 200 nm thick Si3N4 membrane nanostencil suitable for the implantation of donors in silicon. We simulate collimating apertures with widths in the range of 10-50 nm because we expect the onset of J-coupling in a device with 30 nm donor spacing. We find that straggling in the nanostencil produces mis-located implanted ions with a probability between 0.001 and 0.08 depending on the internal collimator profile and the alignment with the beam direction. This result is favourable for the rapid prototyping of a proof-of-principle device containing multiple deterministically implanted dopants.

show abstract

Section: Simulation (500 Kev He Ions)mentioning

confidence: 99%

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

et al. 2013

View full text Add to dashboard Cite

show abstract

“…Back in the 1990s, the TOM (shortcut for tomography) code [ 22 ] was created for the investigation of the radial structure of latent tracks using the energy spectrum of the alpha particles emitted by 241Am α-source, with 5.486 MeV main alpha energy line crossing a membrane. Therefore, the spectra evaluation was based on the use of the energy range of alpha particles emitted by 241Am (that is 85% of 5486 keV, 13% of 5443 keV, and about 2% of 5388 keV).…”

Section: Methodsmentioning

confidence: 99%

Overview of Polyethylene Terephthalate Foils Patterned Using 10 MeV Carbon Ions for Realization of Micromembranes

et al. 2023

View full text Add to dashboard Cite

Polymer membranes are conventionally prepared using high-energy particles from radioactive decay or by the bombardment of hundreds of MeVs energy ions. In both circumstances, tracks of damage are produced by particles/ions passing through the polymer, and successively, the damaged material is removed by chemical etching to create narrow pores. This process ensures nanosized pore diameter but with random placement, leading to non-uniform local pore density and low membrane porosity, which is necessary to reduce the risk of their overlapping. The present study is focused on the use of polyethylene terephthalate (PET) foils irradiated by 10.0 MeV carbon ions, easily achievable with ordinary ion accelerators. The ion irradiation conditions and the chemical etching conditions were monitored to obtain customized pore locations without pore overlapping in PET. The quality, shape, and size of the pores generated in the micromembranes can have a large impact on their applicability. In this view, the Scanning Transmission Ion Microscopy coupled with a computer code created in our laboratory was implemented to acquire new visual and quantitative insights on fabricated membranes.

show abstract

“…The construction and electronic behaviour of these TEMPOS structure have been studied systematically in detail [3][4][5][6][7][8][9][10]. Other track bearing material such as cellulose nitrate, polymers (polyimides, polysiloxanes, polysilanes, PET) came into focus recently [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%