Ion source of high brightness using liquid metal

Abstract

The beam from an EHD ion source using liquid gallium has been shown to have a brigtness of 0.9×105 A cm−2 sr−1 at 21 kV and an energy spread of 12 eV at 10-μA total current. The effective source diameter was 0.2 μm as imaged by a 2-cm-long Einzel lens with a 0.12-mm aperture. Cesium was significantly poorer and mercury much poorer than gallium.

Focused Ion Beam Microscopy and Micromachining

“…[2][3][4] In the 1980s, FIB instruments were embraced by the semiconductor industry as offline equipment for mask or circuit repair. It was not until the 1990s that FIB instruments began to be used in research laboratories, and today there are commercial instruments available from multiple manufacturers.…”

Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films

“…Focused ion beam (FIB) technique has been a very powerful tool since the late 1970s [9]. The FIB technique has been applied to fabricate of photonic crystal structures on the planar chalcogenide thin films [10].…”

Development of a Primary Ion Column for Mass Spectrometry-Based Surface Analysis

“…Such a process is ignited by applying a high potential across the filament, leading to the formation of an electrified interface (Taylor Cone) for ion emission 56 . Cs + PI beams were the first to be used from FES, demonstrating a good amount of source brightness with stable current output, reasonable energy spread for focusing and decent life-times 55 . Further work optimized the basic geometry, materials and emitter properties for a variety of metals 57,58 .…”

“…Field emission sources involve a filament coated in a metal eutectic, from which the ionized metal is emitted 54 . Metals become ionized via an electron-metal electron exchange process driven by quantum tunneling [54][55] . Such a process is ignited by applying a high potential across the filament, leading to the formation of an electrified interface (Taylor Cone) for ion emission 56 .…”