Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Yang, Feng; Kadhim, Mayameen S.; Babiker, Mashair; Elshekh, Hosameldeen; Hou, Wentao; Huang, Guoqiang; Zhang, Yong; Zhao, Yong; Sun, Bai

doi:10.1016/j.mtcomm.2019.100573

Cited by 7 publications

(5 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Figure 1, LDH exhibits strong binding in the XY plane, and the anions inserted between floors are easily exchanged owing to weak binding forces between layers [2]. Using these characteristics, LDH is being studied not only as an anionic exchange agent, catalyst, photocatalyst, and for hydrogen production and CO 2 capture, but also for resistive random access memory (ReRAM) applications [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Zn-Al Layered Double Hydroxide Thin Film Fabricated by the Sputtering Method and Aqueous Solution Treatment

2020

View full text Add to dashboard Cite

Zn-Al layered double hydroxides (LDHs) were synthesized herein via a simple process. First, Al-doped ZnO film was deposited onto a glass substrate using the facing target sputtering system. Successful synthesis of the Zn–Al LDH was achieved via a treatment process using an aqueous solution which contains NO3− anions. X-ray diffraction analysis confirmed that it was consistent with the previous Zn–Al LDH synthesis experiment data, and the calculated d-value was 9.1 Å. Scanning electron microscopy observations revealed that the as-synthesized sample had a plate-like structure.

show abstract

Section: Introductionmentioning

confidence: 99%

Zn-Al Layered Double Hydroxide Thin Film Fabricated by the Sputtering Method and Aqueous Solution Treatment

2020

View full text Add to dashboard Cite

show abstract

“…Under the LRS, the slopes of the two devices are 1.06 and 0.99, respectively, the voltage and current show a linear relationship (the slope is approximately equal to 1), and the fitting results satisfy the Ohm conduction law. 45,46 Under the HRS, it can be divided into two parts: the slopes of the curves in the low-voltage part are 1.01 and 0.99, satisfying Ohm conduction. In the high-voltage part, the slopes of the curves are 1.97 and 1.68, respectively, where the injected carriers dominate and are trapped by the charge trapping center, satisfying spacecharge-limited current theory (SCLC).…”

Section: Resultsmentioning

confidence: 99%

Amylum Resistive Random Access Memory Based on the Quantization Effect of Gold Nanoparticles

Wang

Wen

2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Resistive random access memory (RRAM) is integrated computing and storage, but most devices have problems, such as high power consumption and poor consistency, so it is critical to optimize the performance of the device. In this paper, amylum RRAM is prepared by using the quantization effect of gold nanoparticles (Au NPs), which not only improves the consistency of the threshold voltage distribution of the device but also reduces the power consumption of the device and significantly increases the ON/OFF current ratio of the device. This work not only realized multilevel data storage (4 levels, 2 bits) on the same unit, improving the storage density of starch RRAM, but also simulated the synaptic potentiation and depression behavior, providing a way of thinking for the next generation of artificial intelligence and brain-like neural computing.

show abstract

“…The RS phenomenon is currently present in many materials such as transition metal oxides [18,19], perovskite oxides [20], layered double hydroxides [21], and transition metal dichalcogenides [22]. It is mainly reported that metal oxides like ZnO [23], TiO 2 [24,25], SnO 2 [26], MnO 2 [27], etc exhibit RS properties.…”

Section: Introductionmentioning

confidence: 99%

Solvothermal synthesis of TiO₂ nanospheres for non-volatile memory and synaptic learning applications

et al. 2023

View full text Add to dashboard Cite

In this study, we used the one-pot solvothermal method to synthesize the TiO2 nanospheres (NSs) and used them for non-volatile memory and neuromorphic computing applications. Several analytical tools were used to understand the structural, optical, morphological, and compositional characteristics of synthesized TiO2 NSs. The tetragonal crystal structure of anatase TiO2 was formed, according to the Rietveld refined X-ray diffraction results. The nanosphere morphology was confirmed by field emission scanning electron microscopy and transmission electron microscopy images. X-ray photoelectron spectroscopy was probed to understand the elemental composition and electronic states of the TiO2 NSs. We specifically looked at the impact of reaction time on the structural, optical, morphological, compositional, and resistive switching properties of TiO2 NSs. The fabricated devices (Ag/TiO2 NSs/FTO) exhibit bipolar resistive switching behavior. The optimized resistive switching device shows good endurance (5000 cycles) and memory retention (5000 s) properties. Moreover, fabricated devices showed double-valued charge-flux characteristics, whereas charge transport was caused by the Ohmic and space charge-limited current mechanisms. Additionally, the optimized device can mimic various synaptic characteristics including potentiation-depression, excitatory post-synaptic current (EPSC), and paired-pulse facilitation (PPF).

show abstract

Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Cited by 7 publications

References 36 publications

Zn-Al Layered Double Hydroxide Thin Film Fabricated by the Sputtering Method and Aqueous Solution Treatment

Zn-Al Layered Double Hydroxide Thin Film Fabricated by the Sputtering Method and Aqueous Solution Treatment

Amylum Resistive Random Access Memory Based on the Quantization Effect of Gold Nanoparticles

Solvothermal synthesis of TiO₂ nanospheres for non-volatile memory and synaptic learning applications

Contact Info

Product

Resources

About

Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Cited by 7 publications

References 36 publications

Zn-Al Layered Double Hydroxide Thin Film Fabricated by the Sputtering Method and Aqueous Solution Treatment

Zn-Al Layered Double Hydroxide Thin Film Fabricated by the Sputtering Method and Aqueous Solution Treatment

Amylum Resistive Random Access Memory Based on the Quantization Effect of Gold Nanoparticles

Solvothermal synthesis of TiO2 nanospheres for non-volatile memory and synaptic learning applications

Contact Info

Product

Resources

About

Solvothermal synthesis of TiO₂ nanospheres for non-volatile memory and synaptic learning applications