Ion projection system for IC production

Abstract

An ion projection system suitable for production of IC’s is described. Self-supporting metal masks are imaged with a demagnification of 10 : 1 onto a wafer. The resolution of the system is below 1 μm. Direct structuring of oxide and metal layers without any resist, pattern transposition with thin inorganic resists (40 nm) into semiconductor layers and pattern generation in organic resists is described. Exposure times per chip in the order of magnitude of seconds for all these materials are achieved.

High resolution organic resists for charged particle lithography

“…Electron beam 1,2 and ion beam 3,4 lithography have been studied for fine pattern creation over the last few decades.…”

Reactive Ion Etching Resistant Negative Resists for Ion Beam Lithography

“…Recently, several modified local oxidation technologies have been proposed as a potential isolation approach for VLSI circuit fabrication (3)(4)(5). A sealed interface local oxidation technique was proposed by using a thin thermal SizN4 film in intimate contact with the silicon surface (3).…”

“…Current technological innovation has brought the semiconductor industry to the stage where submicrometer lithography technology will become generally required within five years (1). Ion beam lithography has attracted attention recently for its capability in submicrometer pattern fabrication (2)(3)(4). Dry etching resistant ion beam resists (5), which are indispensible for the coming submicrometer processing technologies, have not necessarily demonstrated their capability in patterning and sensitivities to the ion beam.…”