Ion-pairing between lithium and the residual acceptors in GaSb

High-resistivity GaSb bulk crystals grown by the vertical bridgman method

“…As-grown, undoped bulk GaSb crystals invariably exhibit p-type nature because of the presence of thermodynamic native defects. 7,11 The residual acceptor concentration is of the order of ϳ10 17 cm Ϫ3 irrespective of the bulk growth technique. Numerous attempts have been made to reduce the native defect content by growing the crystals under varying conditions.…”

“…Numerous attempts have been made to reduce the native defect content by growing the crystals under varying conditions. 7,[11][12][13][14][15][16][17][18][19][20] Table I summarizes some of the key parameters that resulted in lower carrier concentration or higher resistivity in GaSb. In this paper, we report the electrical properties of tellurium (Te)-compensated, GaSb bulk crystals of 50-mm diameter (2-in.…”

Self- and zinc diffusion in gallium antimonide

“…Many experiments were carried out at that time to determine the nature of the defect. Ion pairing studies using Li were successful in neutralizing the residual acceptors [Baxter, (1965]. Growth from nonstoichiometric melts also provided some insight into the nature of the defect.…”

A brief review of co-doping

“…The distribution and precipitation of gold (Au) in heavily phosphorus-doped (P-doped) Si [60][61][62] was revealed, and some experimental results of these studies [61] were consistent with the Reiss theory. In addition, ion pairing between Li and acceptors was discovered in GaSb [63] and GaAs [64].…”