Ion Neutralization Processes at Insulator Surfaces and Consequent Impurity Migration Effects in Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Films

McCaughan, Daniel V.; Kushner, R.A.; Murphy, V. T.

doi:10.1103/physrevlett.30.614

Cited by 117 publications

(22 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Typical gases used in plasma treatments are O 2 and O 2 /He mixtures, Ar, and NF 3 /He mixtures. Plasma treatments are based on attack from the ions in the plasma, which causes alkali to migrate at the surface [24][25][26][27]. ''When an ion approaches a glass surface, electron transfer occurs from the surface, neutralizes the ion and creates a positive surface layer on the glass'' [28].…”

Section: The Effects Of Plasma Treatments On Glassesmentioning

confidence: 99%

Hydrophilic nature of silicate glass surfaces as a function of exposure condition

DeRosa

Schader²,

Shelby

2003

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Section: The Effects Of Plasma Treatments On Glassesmentioning

confidence: 99%

Hydrophilic nature of silicate glass surfaces as a function of exposure condition

DeRosa

Schader²,

Shelby

2003

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…Possible combination of kinetic and recombination energies therefore amounts to some 20-25 eV in maximum. Ar ion recombination on silicon surface has been shown by an elegant experiment to release Na-ions bound to the surface [46]. Na-ions are found thereafter to diffuse into the bulk of the crystal.…”

mentioning

confidence: 99%

Multi-Photon Phosphor Feasibility Research

Graham¹,

Chow²

2003

199

341

View full text Add to dashboard Cite

“…In practical calculations, the estimated E i Ј(s m ) for Ne and Xe ions are 20.36 and 11.33 eV, respectively. 12,16 The widths of the F and F ϩ bands are assumed to be 0.3 eV. For Ne ions, the difference in calculated ␥ values between MgO-A -F is small, as shown in Table III.…”

Section: Discussionmentioning

confidence: 99%

Influence of defect states on the secondary electron emission yield γ from MgO surface

Motoyama

Hirano

Ishii

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

In order to study the dependence of the secondary electron emission yield γ on the defect states of the MgO surface in plasma display panels, cathodoluminescence (CL) spectra of MgO films, which were deposited at oxygen partial pressures of 0, 4.0×10−4, and 1.2×10−5 Torr, were measured. The CL intensities from the F (oxygen ion vacancy+one electron) and F+ (oxygen ion vacancy+one electron) centers of the MgO film that was deposited at high oxygen partial pressure (1.2×10−4 Torr), significantly increased with aging during discharge. Assuming that the probabilities of transitions are proportional to the measured CL intensities from the F and F+ bands of the MgO films, the γi values of MgO films for Ne and Xe ions, which include the F and F+ bands, were calculated. The tendencies of the breakdown voltages calculated using these γi values were consistent with those of the measured voltages of the MgO films. These calculated results suggested that the influence of the F and F+ bands on the γi values for Xe ions is large compared with that for Ne ions, and that the γi value of the MgO film for Xe ions increases with increasing numerical densities of the F and F+ centers, especially for F+ centers.

show abstract

Ion Neutralization Processes at Insulator Surfaces and Consequent Impurity Migration Effects in SiO2Films

Cited by 117 publications

References 11 publications

Hydrophilic nature of silicate glass surfaces as a function of exposure condition

Hydrophilic nature of silicate glass surfaces as a function of exposure condition

Multi-Photon Phosphor Feasibility Research

Influence of defect states on the secondary electron emission yield γ from MgO surface

Contact Info

Product

Resources

About