Ion Microprobe Analysis of Integrated Circuit Structures

Dobrott, Robert D.; Keenan, J. A.; Larrabee, Graydon B.

doi:10.1109/irps.1977.362772

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1979

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“…Radiotracer techniques are sensitive to very small surface concentrations and have been applied to Si, Ge, and GaAs (1)(2)(3)(4)(5)(6). Various electron and ion beam surface analytical techniques are now becoming sufficiently sensitive to detect trace impurities (7,8).…”

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confidence: 99%

Effect of Surface Preparation and Heat‐Treatment on Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4

Partin

Milnes

Vassamillet

1979

J. Electrochem. Soc.

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Chemical etching of a semiconducting surface is a process which can deposit trace amounts of metals that can have significant effects on the bulk lifetime after heat-treatment. Several frequently used cleaning processes have been shown to be poor in this respect and improved versions are suggested. The effectiveness of an etchant in cleaning a surface of trace metallic impurities is greater for larger etching rates, and smaller for larger metallic impurity content in the etchant.

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confidence: 99%