Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films

Sharma, Pratibha; Vashistha, M.; Ganesan, V.; Jain, I.P.

doi:10.1016/j.jallcom.2007.09.058

Cited by 12 publications

(6 citation statements)

References 17 publications

(16 reference statements)

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“…Yue et al [20] have observed the annealing effect on physical properties of SnS films and in a similar way Abdalla [21] has reviewed the role of heating films on the optical constants in Ge-Se. The study on the optical properties by gamma and UV irradiation by Balboul [22] , ion irradiation-induced changes in Ge-Se-Bi by Sharma et al [23] , photovoltaic applications on annealing films of Cd-Zn-S by Chavhan et al [24] , ion-beam irradiation on thermal stability in Ge-Sb-Te by Bastiani et al [25] also deserve to be mentioned here.…”

Section: Introductionmentioning

confidence: 97%

Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

Al-Hazmi¹

2013

Journal of King Abdulaziz University-Science

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Ga 15 Se 81 Zn 4 chalcogenide thin films having thickness 300 nm, prepared by vacuum evaporation technique were crystallized by Nitrogen Laser for 10, 20 and 30 min. Assynthesized and laser-crystallized films were analyzed by X-ray diffraction, field emission scanning electron microscopy (FESEM), UV/VIS/NIR spectroscopy and dc conductivity measurements. The observed optical band gap becomes smaller by inducing lasercrystallization period 0 to 30 min, which is due to the crystallization of amorphous films. The lowering of band gap by laser-crystallization is an interesting behavior for a material to be used in various electronic devices. The dc conductivities of assynthesized and laser-crystallized films were analyzed at different temperatures from room temperature to 400 K. We have noticed that the dc conductivity becomes larger at different temperatures under investigation at different laser-crystallization time. Similar to behavior of optical band gap, the dc conductivity activation energy is also observed to become slower with increasing lasercrystallization time and there is a good compliance between these two values.

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Section: Introductionmentioning

confidence: 97%

Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

Al-Hazmi¹

2013

Journal of King Abdulaziz University-Science

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“…In contrast, the high-energy ion undergoes inelastic collision and transfers energy to the lattice, resulting in material modifications due to the electronic energy loss . The low-energy ions undergo nuclear stopping inside the material after getting penetrated a certain depth in the order of a few tens to hundreds nanometers . As the projectiles embed inside the target materials, the low-energy ion irradiation technique is termed as ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Proton Ion Irradiation on As₄₀Se₅₀Sb₁₀ Thin Films: Fluence-Dependent Tuning of Linear–Nonlinear Optical Properties for Photonic Applications

Sahoo¹,

Sahoo

Alagarasan

et al. 2022

ACS Appl. Electron. Mater.

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The present work is focused on the impact of proton irradiation (30 keV) on the structural, optical, and morphological properties of thermally evaporated As 40 Se 50 Sb 10 thin films. The fluence-induced linear and nonlinear optical parameters were calculated from the transmittance, reflectance, and absorbance data obtained from UV−vis spectroscopy in the range of 550−1100 nm. The increase in transmittance suggests that the material is getting more transparent upon proton irradiation. The change in absorption edge, optical band gap, and refractive index represents the post-irradiation effect. The disorder in the film influenced the density of defect states in the localized state region, which led to the changes in the optical band gap. The variation of dispersion and dielectric parameters such as dispersion energy, oscillator energy, dielectric constant, plasma frequency, and real and imaginary optical conductivities upon proton irradiation displays the tuning capabilities of As 40 Se 50 Sb 10 . The higher values of nonlinear optical parameters with proton irradiation are essential for cutting-edge photonic applications. The X-ray diffraction reveals the amorphous nature of the films after proton irradiation, and the microstructural changes were noticed from the Raman spectra. The composition of the films was verified by energy-dispersive X-ray analysis, and the surface morphology pictures were taken by field emission scanning electron microscopy and atomic force microscopy.

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“…Chalcogenide glasses are being considered promising candidates in the last three decades because of their promising optoelectronic, holographic, microelectronic, photoresist, THz, and millimeter-wave applications and their ability to transmit light from the mid-infrared to the far-infrared [1][2][3][4][5][6][7]. Chalcogenides are compounds of group 16 elements from the periodic table.…”

Section: Introductionmentioning

confidence: 99%

Complex Er-doped selenium-based chalcogenides in the far-infrared region: a structural bonding arrangement study

Kumari¹,

Katyal²,

Chhoker³

et al. 2022

Phys. Scr.

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Selenium-based chalcogenide glasses show tremendous infrared transmission in the 2-15 µm region, and these amorphous glasses could be easily formed into optical devices i.e. optical fibers and lenses, owing to their good thermo-mechanical properties. Even though the phonon energy for tellurium-based glasses is on the lower side, still, selenium-based glasses are worthwhile for mid to long-wavelength infrared emissions. Here, we have developed Er-doped Selenium-based, Ge17Sb8Se75-xErx where x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0, chalcogenides through conventional melting and quenching method for possible mid to far-infrared applications. Far-infrared transmission spectra of the synthesized chalcogenides are obtained at room temperature in the spectral range of 35-450 cm-1. The bonding arrangements in the synthesized chalcogenides are investigated as a function of composition. It has been found that with the addition of Er content, the far-infrared transmission spectra shift toward the lower wavenumber side. The experimental results are correlated with the theoretically calculated parameters like relative probability, bond energy, wave number, force constant etc. The obtained results provide insight into understanding the synthesized chalcogenides' optical behavior, which is vital for designing the optical components operated on mid-infrared to far-infrared regions.

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Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films

Cited by 12 publications

References 17 publications

Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

Proton Ion Irradiation on As₄₀Se₅₀Sb₁₀ Thin Films: Fluence-Dependent Tuning of Linear–Nonlinear Optical Properties for Photonic Applications

Complex Er-doped selenium-based chalcogenides in the far-infrared region: a structural bonding arrangement study

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Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films

Cited by 12 publications

References 17 publications

Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

Laser-induced crystallization in Ga15Se81Zn4 chalcogenide thin films

Proton Ion Irradiation on As40Se50Sb10 Thin Films: Fluence-Dependent Tuning of Linear–Nonlinear Optical Properties for Photonic Applications

Complex Er-doped selenium-based chalcogenides in the far-infrared region: a structural bonding arrangement study

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Proton Ion Irradiation on As₄₀Se₅₀Sb₁₀ Thin Films: Fluence-Dependent Tuning of Linear–Nonlinear Optical Properties for Photonic Applications