Ion-induced defects in semiconductors

Corbett, J. W.; Karins, James P.; Tan, T. Y.

doi:10.1016/0029-554x(81)90717-5

Cited by 206 publications

(49 citation statements)

References 92 publications

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“…In the e~-irradiation case the existence of highly mobile SIA's at 10 K which cluster, as a result of random-walk encounters, and then convert to dislocation loops prevents fl-Si from forming. Our result that the 1.0-or 1.5-MeV Kr 4 " irradiations produced a-Si is not surprising, as there is ample prior evidence which indicates that under cascade-producing conditions Si becomes amorphous. 4 The new and surprising result in the present work, is that under the dual irradiation conditions employed, Si retained a degree of crystallinity.…”

Section: Amorphization Processes In Electron-and/or Ion-irradiated Sisupporting

confidence: 52%

“…2 " 4 The critical fluence [displacements per atom (dpa)] required to induce the c-to-a transition is a function of the temperature and the flux (dpa s" 1 ). Alternatively, e~ irradiations-in the range 15 K to room temperature -to fluences of several dpa cannot amorphize Si.…”

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

“…4 The neutral vacancy (v) becomes mobile at ~ 70 K and the v at ~ 160 K. 4 No experimental evidence has been obtained for the stimulated athermal migration of r's in Si by the e ~ beam via, for example, the Bourgoin-Corbett mechanism. 4,11 Thus, the only possible origin of the loops observed by Foil and ourselves is from reactions between highly mobile self-interstitial atoms (SIA's) which lead to SIA clusters that convert into small dislocation loops once a SIA cluster exceeds a critical size. In the e~-irradiation case the existence of highly mobile SIA's at 10 K which cluster, as a result of random-walk encounters, and then convert to dislocation loops prevents fl-Si from forming.…”

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

“…In the diamond cubic lattice each atom has four first nearest neighbors sitting at the vertices of a tetrahedron, which has a basic building block of six-membered rings. 4 Amorphous Si preserves the fourfold coordination of the atoms, and incorporates five-and seven-membered rings. The three-dimensional clustering of SIA's introduces these five-and seven-membered rings and creates embryos of a-Si on the periphery of each cascade.…”

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

“…For example, two split-< 100> SIA's along a (100) direction produce a fivemembered planar ring of atoms in the diamond cubic lattice. 4 To estimate if the above atomistic model is energetically plausible we consider the difference in Gibbs free energies for c-Si containing point defects and a-Si at 0 K. The free-energy difference between c-Si without FP's and a-Si is < 0.1 eV atom -1 . 19 An assumed FP formation energy of 5 eV atom -1 and a SIA concentration of 2 at.% yields 0.1 eV atom -1 .…”

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

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Amorphization processes in electron and/or ion-irradiated silicon

et al. 1987

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Amorphization has been studied in electron-(e~) and ion-irradiated Si. Si irradiated at < 10 K with 1.0-or 1.5-MeV Kr + became amorphous at < 0.4 displacement per atom (dpa), whereas Si irradiated at 10 K to a fluence of ~ 14 dpa of 1-MeV e ~, in an electron microscope, failed to amorphize. However, Si subjected to a simultaneous e ~ and Kr + in situ irradiation at < 10 K to a Kr + fluence of 1.5 dpa retained crystallinity. The critical ratio, at < 10 K, of the e ~ to Kr + ion displacement rates to maintain a degree of crystallinity is ~ 0.5. Atomistic models for these phenomena are presented.

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Section: Amorphization Processes In Electron-and/or Ion-irradiated Sisupporting

confidence: 52%

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

Section: Amorphization Processes In Electron-and/or Ion-irradiated Simentioning

confidence: 99%

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Amorphization processes in electron and/or ion-irradiated silicon

et al. 1987

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In Situ Study of Size and Temperature Dependent Brittle‐to‐Ductile Transition in Single Crystal Silicon

Kang

Saif

2012

Adv Funct Materials

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Silicon based micro‐ and nanometer scale devices operating at various temperatures are ubiquitous today. However, thermo‐mechanical properties of silicon at the small scale and their underlying mechanisms remain elusive. The brittle‐to‐ductile transition (BDT) is one such property relevant to these devises. Materials can be brittle or ductile depending on temperature. The BDT occurs over a small temperature range. For bulk silicon, the BDT is about 545 °C. It is speculated that the BDT temperature of silicon may decrease with size at the nanoscale. However, recent experimental and computational studies have provided inconclusive evidence, and are often contradictory. Potential reasons for the controversy might originate from the lack of an in situ methodology that allows variation of both temperature and sample size. This controversy is resolved in the present study by carrying out in situ thermo‐mechanical bending tests on single crystal silicon samples with concurrent control of these two key parameters. It is unambiguously shown that the BDT temperature reduces with sample size. For example, the BDT temperature decreases to 293 °C for a sample size 720 nm. A mechanism‐based model is proposed to interpret the experimental observations.

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Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

Shi

Sahu

Oehrlein

et al. 1982

phys. stat. sol. (a)

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Based on the quantitative consideration of the chemical effect of nearest neighbor atoms on the bond character and IR vibration frequency of SiH bond in silane molecules, models are proposed for SiH vibration centers and related defect–impurity complexes in crystalline silicon to account for the multiplicity of experimentally observed SiH IR bands in c‐Si and their annealing behavior. Problems related to the models are discussed, and experiments to test the models are described.

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Ion-induced defects in semiconductors

Cited by 206 publications

References 92 publications

Amorphization processes in electron and/or ion-irradiated silicon

Amorphization processes in electron and/or ion-irradiated silicon

In Situ Study of Size and Temperature Dependent Brittle‐to‐Ductile Transition in Single Crystal Silicon

Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

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