Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.
DOI: 10.1109/lechpd.2004.1549707
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Ion implanted SiC static induction transistor with 107 W output power and 59% power added efficiency under CW operation at 750 MHz

G.C. De Salvo
1
,
P.M. Esker
2
,
T. Flint
3
et al.
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