Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection

Liao, Kaisheng; Li, Ning; Liu, Xihui; Huang, Liang; Zeng, Qiaoyu; Zhou, Xueqing; Li, Zhifeng

doi:10.1117/12.2034769

Cited by 12 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…symmetric blackbody response current density-voltage curves under positive and negative electric fields, shown in Figure 3, indicate that the doping impurity band of the highly conductive Ge substrate degenerated; that is, the doping concentration of the substrate was high enough that it had an extremely small resistance value and worked as a conductor, and the electrodes were well ohmic contacted. The Rbb of the detector can be calculated by the formula [26][27][28]: symmetric blackbody response current density-voltage curves under positive and negative electric fields, shown in Figure 3, indicate that the doping impurity band of the highly conductive Ge substrate degenerated; that is, the doping concentration of the substrate was high enough that it had an extremely small resistance value and worked as a conductor, and the electrodes were well ohmic contacted. The Rbb of the detector can be calculated by the formula [26][27][28]: The R bb of the detector can be calculated by the formula [26][27][28]:…”

Section: Resultsmentioning

confidence: 99%

“…The Rbb of the detector can be calculated by the formula [26][27][28]: symmetric blackbody response current density-voltage curves under positive and negative electric fields, shown in Figure 3, indicate that the doping impurity band of the highly conductive Ge substrate degenerated; that is, the doping concentration of the substrate was high enough that it had an extremely small resistance value and worked as a conductor, and the electrodes were well ohmic contacted. The Rbb of the detector can be calculated by the formula [26][27][28]: The R bb of the detector can be calculated by the formula [26][27][28]:…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Wu¹,

Dong²,

Chen³

et al. 2022

Sensors

View full text Add to dashboard Cite

To investigate the effects of the pixel sizes and the electrode structures on the performance of Ge-based terahertz (THz) photoconductive detectors, vertical structure Ge:Ga detectors with different structure parameters were fabricated. The characteristics of the detectors were investigated at 4.2 K, including the spectral response, blackbody response (Rbb), dark current density-voltage characters, and noise equivalent power (NEP). The detector with the pixel radius of 400 μm and the top electrode of the ring structure showed the best performance. The spectral response band of this detector was about 20–180 μm. The Rbb of this detector reached as high as 0.92 A/W, and the NEP reached 5.4 × 10−13 W/Hz at 0.5 V. Compared with the detector with a pixel radius of 1000 μm and the top electrode of the spot structure, the Rbb increased nearly six times, and the NEP decreased nearly 12 times. This is due to the fact that the optimized parameters increased the equivalent electric field of the detector. This work provides a route for future research into large-scale array Ge-based THz detectors.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Wu¹,

Dong²,

Chen³

et al. 2022

Sensors

View full text Add to dashboard Cite

show abstract

“…各单元的光电响应谱在图22(a)-(c)中给出, SPP耦合器件的光电响应与参考器件unit #3相比实现了明显增强 [23] . [41] . 图 20 (网络版彩图)不同阻挡层厚度探测器的暗电流曲线 [41] .…”

Section: 共振波长的透射率高于占空比这种异常透射现象可unclassified

“…Color online) (a) A schematic of a planar BIB detector; (b) profile of doping concentration in the active layer by several-differentenergy ion-implanted scheme[41]. Reprinted with permission.…”

mentioning

confidence: 99%

See 1 more Smart Citation

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

Zhu

et al. 2021

Sci. Sin.-Phys. Mech. Astron.

View full text Add to dashboard Cite

Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation

et al. 2014

View full text Add to dashboard Cite

Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection

Cited by 12 publications

References 0 publications

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation

Contact Info

Product

Resources

About