Ion implanted junction formation in Hg1−xCdxTe

Abstract

This work reports on two significantly different methods to form junctions in Hg1−xCdxTe by ion implantation: a ‘‘displaced Hg diffusion source’’ for n-on-p junctions and an ‘‘implanted species diffusion source’’ for p-on-n devices. For each one, the role of background impurities, stoichiometric defects, and implanted species of junction formation have been determined. In spite of superficial damage created by the implant, these methods produced implanted junctions of either type with low damage in the near-junction region, resulting in excellent electrical characteristics.

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

“…[1][2][3][4][5] Similar effects have been observed for Ion Beam Milling (IBM) of HgCdTe. In the case of HgCdTe it has been shown that RIE in H 2 /CH 4 plasma results in surface damage and type conversion of p-type HgCdTe to ntype.…”

Process modeling of HgCdTe infrared photodetectors

“…21,22 The implant module plots the ion profile using a four moment Pearson IV distribution. 21,22 The implant module plots the ion profile using a four moment Pearson IV distribution.…”

Junction formation by hydrogenation for HgCdTe diodes

“…But it gives damage to HgCdTe material, and needs additional thermal annealing processes. 1,2 In-situ junction formation during molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) growing process is also used. But it is difficult to make planar structure by these techniques.…”