Ion-implanted ESFI MOS devices with short switching times

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

“…In 1974 a process was described by Pomper and Tihanyi 133 and, more recently, by Preuss et al} 19 for the fabrication of self-aligned aluminum gate CMOS-SOS transistors and integrated circuits. The process sequence is shown in Fig.…”

“…The process sequence is shown in Fig. The use of an isoplanar aluminum gate process was alluded to by Pomper and Tihanyi, 133 and described by Farrington 134 and Capell. After the silicon islands have been etched and doped, the source and drain regions are doped using gaseous or solid diffusion techniques.…”

“…Pomper and Tihanyi 133 built ring oscillators to demonstrate their selfaligned aluminum gate process (Fig. 64) and measured a propagation delay of 800 psec at 5 V. The channel length of these devices had been reduced to 3.0 μχη.…”