Ion implantation with scanning probe alignment

Abstract

We describe a scanning probe instrument which integrates ion beams with the imaging and alignment function of a piezo-resistive scanning probe in high vacuum. The beam passes through several apertures and is finally collimated by a hole in the cantilever of the scanning probe. The ion beam spot size is limited by the size of the last aperture. Highly charged ions are used to show hits of single ions in resist, and we discuss the issues for implantation of single ions.

Single Ion Implantation into Si-Based Devices

“…[10] Single ion implantation and detection has been reported by a number of groups. [11][12][13][14][15][16][17][18][19] These works are compared in Table I. The table shows the energy and type of implanted ion as well as the target type and detection scheme used.…”

“…[11] This scheme has resulted in a device where the timeresolved control and transfer of a single electron between two deterministically implanted P atoms was observed. [20] Other detection schemes are based on ion impact signals from secondary electrons [14,16,18] or the modulation of the drain current, I d . [13,15,17,19] For I d modulation, discrete downward steps in I d have been observed with low energy Si + implantation into a micron-scale SOI channel.…”

“…[20] Other detection schemes are based on ion impact signals from secondary electrons [14,16,18] a These values represent the percentage of the total energy lost to ionization and nuclear recoils, respectively as calculated with SRIM. Additional energy loss occurs via phonon generation.…”

“…Low energy single dopant implantation into both micron-scale and nano-scale devices has been reported (indicated by the bold text in Table I). [11,15,19] Deterministic P implantation was achieved by the detection of the electron-hole (e-h) pairs created by the ion impact with an integrated PiN structure.[11] This scheme has resulted in a device where the timeresolved control and transfer of a single electron between two deterministically implanted P atoms was observed.[20] Other detection schemes are based on ion impact signals from secondary electrons [14,16,18] a These values represent the percentage of the total energy lost to ionization and nuclear recoils, respectively as calculated with SRIM. Additional energy loss occurs via phonon generation.…”

Single atom doping for quantum device development in diamond and silicon

“…In our approach to single atom doping, we integrate broad ion beams from a series of ion sources with a scanning force microscope ͑SFM͒. 7,8 Here, a small ͑Ͻ100 nm͒ hole in the tip of the SFM cantilever acts as an aperture and defines the beam spot. With this technique we have demonstrated formation of arbitrary patterns in resist layers with feature sizes down to 90 nm.…”