2011
DOI: 10.1016/j.vacuum.2010.12.024
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Ion implantation techniques for non-electronic applications

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Cited by 23 publications
(14 citation statements)
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“…The basic difference between ion beam implantation (II) and plasma immersion ion implantation (PIII) consist in PIII the target is an active part of the system, and it is biased at pulsed high voltage. On the other hand, in II, the target is isolated from the ion beam generation (it is not active part of electric circuit), and both treatments have relevant differences as it can be shown in Table 1 [71].…”
Section: Ion Implantation Techniquesmentioning
confidence: 99%
“…The basic difference between ion beam implantation (II) and plasma immersion ion implantation (PIII) consist in PIII the target is an active part of the system, and it is biased at pulsed high voltage. On the other hand, in II, the target is isolated from the ion beam generation (it is not active part of electric circuit), and both treatments have relevant differences as it can be shown in Table 1 [71].…”
Section: Ion Implantation Techniquesmentioning
confidence: 99%
“…In this process, a high energy ion beam (50-200 keV) is accelerated and impacted onto the substrate surface to modify its properties (54). This is similar to the plasma nitriding process but requires a much lower substrate temperature (250 C) and significantly higher ion energy.…”
Section: Ion Implantationmentioning
confidence: 99%
“…In this section, we mainly discuss the decisive properties, such as hardness, wear behaviour and corrosion resistance, all of which have great significance in ensuring application safety and elongating useful life of biomedical implants [34,35].…”
Section: Mechanical and Chemical Properties Of Plasma Immersion Ion Imentioning
confidence: 99%