Ion implantation studies of (SN)x and (CH)x

Allen, W. N.; Brant, Patrick; Carosella, C.A.; DeCorpo, J. J.; Ewing, C. T.; Saalfeld, F. E.; Weber, David C.

doi:10.1016/0379-6779(80)90006-5

Cited by 44 publications

(9 citation statements)

References 6 publications

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“…A comparison of the intensities of the ls nitrogen ESCA peak with the 2 p sulfur peak further indicates implantationinduced depletion of nitrogen in (SN) 1 in the near-surface region for low energy (25 keV) 8"Br ions at a fluence of 0 = 5 x 10 1cm-2 [9]. Evidence has also been presented for the chemical binding of the implanted bromine to a single site of the (CH)x backbone.…”

Section: Structural Damage and Chemical Modificationsmentioning

confidence: 92%

“…A similar bonding arrangement for implanted halogens has been proposed [9] for halogens implanted (CH) x and (SN) x.…”

Section: Electrical Conductivitymentioning

confidence: 99%

“…Some workers [9][10][11] have used relatively low energy implants 25 < E < 90 keV to confine the implants to near-surface regions of the polymer substrate, while other workers [4][5][6] ion exceeds 3p, which is significantly larger than the film thickness of -0.5 p that was used [12].…”

Section: Ion Implantation and Sample Characterizationmentioning

confidence: 99%

“…It has also been demonstrated that ion implantation can enhance the conductivity of polymers that are already conducting [9][10][11] such as polysulfurnitride (SN)x and polyacetylene (CH)x. From this listing (see Fig.…”

Section: Ion Implantation and Sample Characterizationmentioning

confidence: 99%

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Ion Implantation of Polymers

1983

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Ion implantation provides a mechanism for radically modifying the electronic and transport properties of a variety of polymers that are normally insulating.By using masks and tailoring the implanted species and ion energies, conducting paths in an insulating medium can be fabricated between specific reference points, an application of obvious relevance to the microelectronics industry.Specific results are reported for modification of the structure, electrical conductivity, thermoelectric-power, optical transmission and electron spin resonance for several polymers under a variety of implantation conditions.The temperature and frequency dependence of the conductivity suggest a onedimensional variable range hopping mechanism for conduction along the polymer chains. Comparison is made between implantation in the 200 keV and 2 MeV energy ranges.

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Section: Structural Damage and Chemical Modificationsmentioning

confidence: 92%

“…A similar bonding arrangement for implanted halogens has been proposed [9] for halogens implanted (CH) x and (SN) x.…”

Section: Electrical Conductivitymentioning

confidence: 99%

Section: Ion Implantation and Sample Characterizationmentioning

confidence: 99%

Section: Ion Implantation and Sample Characterizationmentioning

confidence: 99%

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Ion Implantation of Polymers

1983

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“…The last problem is the thermal stability of t h e doping s p e c i e s which must s t a y r e a s o n a b l e f o r t e m p e r a t u r e s ranging 100° C s i n c e t h i s i s t h e domain o f o p e r a t i n g temperatures which may be met i n e l e c t r o n i c d e v i c e s . W e have t h e n c o n s i d e r e d t h e t h r e e f o l l o w i n g a s p e c t s : (1) s t a b i l i t y of p o l y a c e t y l e n e towards i o n i c i r r a d i a t i o n ( 2 ) s t a b i l i t y of implanted ( C H ) i n r e s p e c t t o o x i d a t i o n ( 3 ) thermic s t a b i l i t y of t h e imfilant I1 -EXPERIMENTAL The ( C H f i l m s were grown a t t h e CRM S t r a s b o u r g (CNRS) i n t h e u s u a l way / 5 / ) 8 n a Z i e g l e r -N a t t a l a y e r o f c a t a l y s t s o l u t i o n /6/. The p u r i t y o f i n t r i n s i c p o l y a c e t y l e n e h a s been c h a r a c t e r i z e d by d u t h e r f o r d Backs c a t t e r i n g Spectroscopy a t t h e Dgpartement de Physique d e s Matkriaux and t h e e l e c t r i c a l c o n d u c t i v i t y , which was s t u d i e d a t t h e L a b o r a t o i r e de Physique E l e c t r o n i q u e , showed a c l o s e connection between t h e measured v a l u e s and t h e c o n c e n t r a t i o n of r e s i d u a l i m p u r i t i e s remaining from t h e c a t a l y s i s 171.…”

Section: -Introductionmentioning

confidence: 99%

Stability of Polyacetylene Doped by Ion Implantation

Davenas

Maitrot

et al. 1983

J. Phys. Colloques

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Résumé -L'introduction d'impuretés dopantes dans des polymères tels que (CH) permet d'induire des'propriétés semiconductrices de type p ou n, ou même un régime de conduction métallique lorsque l'on augmente la concentration. Nous présentons de nouveaux résultats concernant la stabilité du polyacétylène dopé par implantation d'ions, vis à vis: (1) de la dégradation induite par l'irradiation ionique (2) de l'oxydation et (3) des traitements thermiques. Deux types de techniques ont été utilisées dans ce but: (1) la modification des propriétés électriques et (2) la microanalyse nucléaire pour la détermination du profil de distribution des différents éléments chimiques. En particulier, la résonance à 6385 keV de l'azote 15 a été utilisée pour déterminer la composition en hydrogène de la matrice en fonction de la profondeur. La répartition des différentes espèces dopantes et son évolution au cours des traitements a été étudiée par rêtrodiffusion Rutherford.Abstract -The introduction of doping impurities in polymers such as (CH) can induce n or p type semiconducting properties or a metallic regime when increasing the concentration. We present some new results on the stability of (CH) films doped by ion implantation, in respect to: (1) the degradation induced" by the ionic irradiation, (2) oxidation, (3) thermal annealings. For that purpose two types of techniques have been used (1) modification of the electrical conductivity and (2) nuclear microanalysis for depth profiling of the different elements. In particular the nuclear resonance at 6385 keV of N was used to determine the hydrogen composition of the matrix as a function of the depth. The repartition of the different doping species and the evolution with annealings was studied by Rutherford Backscattering Spectroscopy (RBS).

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Electrical properties of ion‐implanted poly(p‐phenylene sulfide)

Mazurek

Day

Maby

et al. 1983

J. Polym. Sci. Polym. Phys. Ed.

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Ion implantation of impurities into thin films of poly(p‐phenylene sulfide) (PPS) is found to increase the conductivity of the material by up to 12 orders of magnitude. The increase is stable under exposure to ambient conditions, in contrast to the instability of the conductivity increases in PPS produced by chemical doping with AsF5. PPS films 0.1–0.2 μm thick are spin cast from solution onto interdigitated electrodes patterned on an oxidized silicon substrate. The room‐temperature interelectrode resistance is measured as a function of implantation fluence. An estimate of film conductivity is obtained from this resistance with a simple model for the electrode and film geometry. A first experiment yielded similar conductivity increases for implantation of either arsenic or krypton. At a fluence of 1 × 1016cm−;2, which corresponds to an average impurity concentration of 2.5 × 1021cm−3, the conductivity reaches an apparently saturated value of 1.5 × 10−5 (Ω cm)−1. Infrared spectra of the films before and after implantation suggest that crosslinking may be present in the implanted films, and Auger studies show stoichiometric changes throughout the implanted layer. These results suggest that the observed conductivity changes are the result of molecular rearrangements produced by the implantation rather than the result of specific chemical doping. Specific chemical doping may, however, explain the results of a second experiment in which implantation of bromine resulted in substantially larger conductivities found to increase at an approximate linear rate from a value of 1.0 × 10−4 (Ω cm)−1 at a fluence of 1 × 1016 cm−2 to a value of 4.0 × 10−4 (Ω cm)−1 at a fluence of 3.16 × 1016 cm−2.

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Ion implantation studies of (SN)x and (CH)x

Cited by 44 publications

References 6 publications

Ion Implantation of Polymers

Ion Implantation of Polymers

Stability of Polyacetylene Doped by Ion Implantation

Electrical properties of ion‐implanted poly(p‐phenylene sulfide)

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