Ion implantation into GaN

Kucheyev, S. O.; Williams, James S.; Pearton, S. J.

doi:10.1016/s0927-796x(01)00028-6

Cited by 399 publications

(291 citation statements)

References 133 publications

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“…The damaged region extends Â/ 0.42 mm from the surface, but remains single-crystal. This microstructure is typical of compound semiconductors implanted with high ion doses [15,16], in which a variety of lattice defects are created and are relatively stable against annealing. It is well established that extended defects have only a second-order effect on the electrical properties of implanted layers in compound semiconductors [15].…”

Section: Methodsmentioning

confidence: 99%

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Overberg

Theodoropoulou

Chu³

et al. 2002

Materials Science and Engineering: B

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Structural and magnetic characteristics of Ni-implanted GaP were measured for doses in the range 3 Á/5 )/10 16 cm (2 . After subsequent annealing at 700 8C, transmission electron microscopy (TEM) showed residual lattice damage which was more significant in highly carbon-doped epi layers as compared to bulk GaP substrates. The magnetization measurements showed two different contributions, one present at 5/75 K and the other below Â/225 K. No secondary phase formation was detected in either type of GaP. #

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Section: Methodsmentioning

confidence: 99%

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Overberg

Theodoropoulou

Chu³

et al. 2002

Materials Science and Engineering: B

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“…For the as-implanted GaN, early studies [5][6][7] have reported on some typical features: planar defects, and an amorphous layer which formed on top of GaN. The planar defects have been observed to be the most characteristic defects in GaN bombarded with ions in a wide range of implantation conditions, independently of the ion, fluence, energy, and implantation temperature.…”

Section: Introductionmentioning

confidence: 99%

“…The planar defects have been observed to be the most characteristic defects in GaN bombarded with ions in a wide range of implantation conditions, independently of the ion, fluence, energy, and implantation temperature. The amorphous layer was reported to form for ion fluences exceeding some critical value, at RT or liquid nitrogen temperature [6,7]. However, recent results have reported not only on amorphous material in this layer but also on some crystalline parts [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Rare Earth Ion Implantation in GaN: Damage Formation and Recovery

et al. 2006

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Rare earth ions implanted GaN has been investigated by transmission electron microscopy versus the fluence, using Er, Eu or Tm ions at 150 keV or 300 keV and at room temperature. Point defect clusters and stacking faults are generated from low fluences (7 × 10 13 at/cm 2 ), their density increases with the fluence up to the formation of a highly disordered layer at the surface. This highly disordered layer is observed from a threshold fluence of 3×10 14 at/cm 2 at 150 keV and 3×10 15 at/cm 2 at 300 keV, and appears to be composed of voids and misoriented nanocrystallites. Its thickness rapidly increases with the fluence, and then saturates. Both basal and prismatic stacking faults were observed. Basal stacking faults are I 1 in majority, but E or I2 have also been identified. I1 basal stacking faults propagate easily through GaN by folding from basal to prismatic planes. Channelling implantation, increasing the implantation temperature from room temperature to 500 • C, or implanting through a 10 nm thick AlN cap reduce the crystallographic damage, particularly by retarding the formation of the highly disordered layer. Implanting through the AlN cap allows the highly disordered layer formation threshold fluence to be increased by one order of magnitude, as well as the annealing at high temperature (1300 • C) which brings about a strong optical activation of the rare earths.

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“…It is well known that ion bombardment in vacuum of III-V semiconductors such as GaN [5][6][7], GaAs, InN, InAs, and InP can give rise to the formation of metallic droplets on the substrate surface [2,8,9]. Preferential sputtering of the group V element and ion beam induced decomposition and restructuring of the surface cause the group III species to accumulate [5,10,11], and droplets to form through nucleation, growth and ripening mechanisms [2,8,9,12].…”

mentioning

confidence: 99%

Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

Botman¹,

Bahm

Randolph³

et al. 2013

Phys. Rev. Lett.

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Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga þ beam in a gaseous XeF 2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled, gallium fluoride tapered tube (sheath). The structures form through an interdependent, self-ordering cycle of liquid cap growth and solid sheath formation. The sheath and core growth mechanisms are not catalytic, but instead consistent with a model of ion-induced Ga and F generation, Ga transport through surface diffusion, and heterogeneous sputtering caused by self-masking of the tapered pillars.

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Ion implantation into GaN

Cited by 399 publications

References 133 publications

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

Rare Earth Ion Implantation in GaN: Damage Formation and Recovery

Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

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