The plasma sheath dynamics adjacent to the cathode in the presence of electrons, ions, and doubly ionized ions have been simulated in this work. The aim of the present investigation is, therefore, to study the effect of the doubly ionized ions on the characteristics of the plasma sheath dynamics such as potential distribution, sheath length, and ions dose and velocity near the surface (cathode). It was shown that the presence of the doubly ionized ions can increase the normalized potential of all positions in sheath region, sheath length, and ion/doubly ionized ions density ratio on the target. Obtained results may be helpful for analyzing the practical results of the surface operations such as ion implantation and plasma polymerization, etc.
IntroductionPlasma immersion ion implantation (PIII) is a burgeoning (Conrad 1987;Chen et al. 1991;Collins et al. 1994;Anders 2000) and cost-efficient (Gong et al. 2005) technology for surface modification of materials. With this technique, the range of the targets that can be modified by PIII was enlarged (Qi et al. 2003a). In the PIII process, a target is immersed in plasma and biased negatively to attract ions. A plasma sheath (non-neutral region) is formed around the target that expands into the plasma. The ions inside the sheath region are then accelerated and implanted onto the target surface. As the sheath conformably surrounds the target, all surfaces are implanted at the same time, leading to significantly reduced implantation times (Anders 1997). There is growing worldwide interest in PIII technique due to its versatility in surface treatment of wide range of materials, including metals, semiconductors, ceramics, and polymers (Gong et al. 2005).Study on PIII process is very important for many relevant applications such as to modify the surface properties of materials (Tian et al. 2001(Tian et al. , 2004. Surface modification by ion implantation for wear, corrosion, or electronic device applications is aided by knowledge of the retained dose of the implant species. Together with chemical phase information, the retained dose can serve as a basis for understanding the resulting changes in materials properties and, thereby, provide a method for optimizing the implantation process. PIII process parameters, such as pulse voltage, plasma density, and ions velocity are the crucial factors that will influence the retained dose, and the study of the relation between which will help to tailor the treatment conditions and to get desired results (Qi et al. 2003b).