Ion Implantation in Silicon—Physics, Processing, and Microelectronic Devices

Pickar, K.A.

doi:10.1016/b978-0-12-002905-1.50009-8

Cited by 10 publications

(4 citation statements)

References 159 publications

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“…Ion-implantation in semiconductors is known to cause defects and deep states, leading eventually, for high fluences, to amorphization. 10,11 Defects introduced in the crystal are scattering centers and must be annealed out to recover a good crystalline quality and fully activate the implanted dopants. 10,11 It is thus not surprising that our doped SiNWs show a larger hysteresis, since we expect them to have many unpassivated states, prone to charge trapping.…”

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“…10,11 Defects introduced in the crystal are scattering centers and must be annealed out to recover a good crystalline quality and fully activate the implanted dopants. 10,11 It is thus not surprising that our doped SiNWs show a larger hysteresis, since we expect them to have many unpassivated states, prone to charge trapping. Yet, it is noteworthy that parameters such as ON currents and subthreshold slopes are closely comparable to those of asgrown NW transistors.…”

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confidence: 99%

“…High-fluence ion bombardment, however, may induce amorphization in crystalline Si . For conventional wafers, full recrystallization of the amorphous phase can be induced by annealing, since the bulk Si substrate acts as a seed for recrystallization. , For free-standing NWs, on the other hand, amorphization is in principle a major concern. If full amorphization occurs in a SiNW as a result of high-fluence implantation, it might not be possible to recover its original crystalline order.…”

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Ion Beam Doping of Silicon Nanowires

et al. 2008

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We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline structure can be recovered by thermal annealing at 800 degrees C. For not-annealed, as-implanted NWs, we correlate the onset of amorphization with an increase of phonon confinement in the NW core. This is ion-dependent and detectable for P-implantation only. Hysteresis is observed following both P and B implantation.

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Ion Beam Doping of Silicon Nanowires

et al. 2008

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“…A dose of 10 15 cm Ϫ2 and energy of 60 KeV were selected for implantation conditions, which provided a peak concentration of 1.3 ϫ 10 20 cm Ϫ3 at a depth of 80 nm, sufficient for both AES and SIMS measurements. 4 A beam current of 10 A resulted in a required implantation time of approximately 15 min for this dose.…”

Section: Implantation Conditionsmentioning

confidence: 99%

Investigation of Trimethylphosphine as a Source for [sup +]P[sub 31] Implantation Using a Cold-Cathode Implantation System for Silicon Device Fabrication

Oleszek

2001

J. Electrochem. Soc.

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Trimethylphosphine, ͑CH 3 ͒ 3 P, an organic phosphine liquid, has been investigated as a source for ϩ P 31 ion implantation in silicon using a cold-cathode implantation system. The use of trimethylphosphine has the potential to minimize safety concerns associated with other implantation sources for phosphorous. Using secondary-ion mass spectroscopy and Auger electron spectroscopy analysis the P ϩ , (CH 2 ) ϩ , and ͑CH͒P ϩ current peaks were identified. A graphical analysis procedure was then used to predict the other dominant peaks of the beam current spectrum. Using this graphical analysis the dominant species of the beam current spectrum were determined to be (CH 3 ) ϩ , (CH 2 ) ϩ , ͑CH 3 ͒2P ϩ , and ͑CH 3 ͒3P ϩ . Although the beam current spectrum for (CH 3 ͒ 3 P was found to be abundant in ionic species, the P ϩ beam current peak was easily resolved. The P ϩ peak revealed no carbon, indicating the suitability for silicon device fabrication.Ion implantation technology is extensively used for doping of silicon during semiconductor fabrication. Currently, PH 3 is widely used as an implantation source for the dopant phosphorous. However, PH 3 presents concerns from considerations of health and safety. The use of trimethylphosphine, ͑CH 3 ͒ 3 P, as an ion implantation source has the potential to minimize these hazards. This organic source, however, has two potential disadvantages; an abundant beam current spectra of ionic species, which would create difficulty in resolving the P 31 species for implantation, and carbon contamination of the P 31 peak.In this paper, we report on an investigation of the feasibility of using trimethylphosphine, ͑CH 3 ͒P, for ϩ P 31 implantation in a coldcathode implantation system. Approximate implantation dose and energy requirements for Auger electron spectroscopy ͑AES͒ and secondary-ion mass spectroscopy ͑SIMS͒ detection of implanted species were determined using computer simulations ͑SUPREM͒. Other ionic species in the beam current spectrum were determined by a graphical analysis method, in conjunction with AES and SIMS measurements, confirming selected current peaks. Ion Implantation SystemThe implantation system used in this work was an Extrion model 200-20A ion implanter, which used a gaseous source of trimethylphosphine in a Penning cold-cathode discharge system. The trimethylphosphine was purchased in a lecture bottle from Alfa Products. 1 Trimethylphosphine, ͑CH 3 ͒ 3 P, is a colorless liquid with a boiling point, at 760 mm Hg, of 37.8 C. At 20°C, the vapor pressure is 373 mm Hg, and was high enough to be effective as a gaseous source for this ion implantation system at room temperature. 2 Consequently, no external heating of the source was needed. Preacceleration mass analysis was employed in conjunction with a gridded lens and electrostatic scanning. The extraction potential was 25 keV, which permitted analysis of ions with a mass to charge ratio up to 76 amu/charge. Because the amu of ͑CH 3 ͒ 3 P is 76, the ion implanter was able to analyze all potential species. Implantat...

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Silicon Based Devices

Rimini

1995

Ion Implantation: Basics to Device Fabrication

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Ion Implantation in Silicon—Physics, Processing, and Microelectronic Devices

Cited by 10 publications

References 159 publications

Ion Beam Doping of Silicon Nanowires

Ion Beam Doping of Silicon Nanowires

Investigation of Trimethylphosphine as a Source for [sup +]P[sub 31] Implantation Using a Cold-Cathode Implantation System for Silicon Device Fabrication

Silicon Based Devices

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