The low-temperature dc conductivity and magnetoconductivity of ion-implanted ͑Ar ϩ ͒ and chemically doped ͑H 2 SO 4 ͒ polyaniline films have been studied. The metal-insulator transition has been observed for ion-implanted polyaniline films on increasing the irradiation dose to 3ϫ10 17 ions cm Ϫ2 . The maximum values of the room-temperature conductivity reached 800 S cm Ϫ1 for ion-implanted and 8 S cm Ϫ1 for chemically doped polyaniline films. In both cases, for samples on the insulator side of the metal-insulator transition, (T)ϭ͑0͒exp͓Ϫ(T 0 /T) m ͔, where mϳ0.5, whereas for the most heavily ion-implanted polyaniline films (T)ϳT at TϾ20 K; the minimum in the (T) occurs at Tϳ20 K and a negative magnetoconductance ⌬(H,T)ϳH 2 has been observed. It is shown that electron-electron Coulomb interactions play an important role in charge-carrier transport in ion-implanted polyaniline films near the metal-insulator transition.