Ion implantation effects on the characteristics of β-Ga2O3 epilayers grown on sapphire by MOCVD

Horng, Ray−Hua; Sood, Apoorva; Tarntair, Fu-Gow; Wuu, Dong-Sing; Hsiao, Ching‐Lien; Pratap, Singh Jitendra

doi:10.1016/j.ceramint.2022.08.202

Cited by 9 publications

(3 citation statements)

References 16 publications

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“…Recent research, such as Hrubisak et al’s work on liquid injection metal–organic chemical vapor deposition (MOCVD) growth of monoclinic β-Ga 2 O 3 films on 4H-SiC, Hu et al’s achievement of step-flow growth of β-Ga 2 O 3 films on off-axis 4H-SiC via LPCVD, and Xia et al’s extension to hexagonal phase-pure ε-Ga 2 O 3 films on 6H-SiC using MOCVD, has contributed to the understanding of Ga 2 O 3 growth dynamics on high thermal conductivity substrates. However, improvements are still needed to meet commercial standards, exemplified by commercial GaN on Si heteroepitaxy, where epilayer quality routinely exhibits XRD rocking curve fwhm values in the range of 0.1°–0.11°. , The best quality of β-Ga 2 O 3 on foreign substrates has been obtained on c-plane sapphire substrates, typically with fwhm values ranging from 0.6°–1°. − Further improvement in layer quality can be achieved by using offcut substrates. A better understanding of growth dynamics is crucial to achieve the highest quality of Ga 2 O 3 on high thermal conductivity substrates, such as diamond and SiC, for commercial applications.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the likelihood of nucleation is expected to be comparable. Notably, high-quality β-Ga 2 O 3 growth on sapphire is often reported at temperatures exceeding 800 °C. , However, one of the challenges in growing β-Ga 2 O 3 on SiC substrate with a pure oxygen source at high temperature is the formation of an amorphous SiO 2 layer on the growth surface that can potentially result in a poor crystal quality. Si-terminated 4H-SiC/β-Ga 2 O 3 interface is highly sensitive to oxygen due to its lowest migration energy.…”

Section: Introductionmentioning

confidence: 99%

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Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Sanyal,

Nandi,

Cherns

et al. 2024

ACS Appl. Electron. Mater.

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Heteroepitaxy of gallium oxide (Ga 2 O 3 ) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga 2 O 3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga 2 O 3 on 4H-SiC (0001) substrates using metal−organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga 2 O 3 heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga 2 O 3 on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C−950 °C, that can be used for the growth of β-Ga 2 O 3 on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ−ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga 2 O 3 with dominant peaks in the (−201) direction. The buffer layer grown at 950 °C using a "ramp-growth" technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga 2 O 3 heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga 2 O 3 island grown on 4H-SiC is calculated to be 0.2 J/m 2 from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Sanyal,

Nandi,

Cherns

et al. 2024

ACS Appl. Electron. Mater.

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“…These superlative material characteristics permit β-Ga 2 O 3 to be employed for many electrical devices, such as metal–oxide–semiconductor field-effect transistors (MOSFET) [ 6 – 10 ], metal–semiconductor field-effect transistors (MESFET) [ 11 ], and Schottky barrier diodes [ 12 ]. In addition, to increasing conductivity, most devices are grown homoepitaxially and doped by Si-ion implantation forming a shallow donor [ 13 ]. Furthermore, there are many studies on both depletion-mode (D-mode) MOSFETs using Ga 2 O 3 epilayers on bulk Ga 2 O 3 substrates and Ga 2 O 3 grown on sapphire substrates combined with Si-ion implantation technologies [ 6 – 8 ].…”

Section: Introductionmentioning

confidence: 99%

β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Tarntair

Kao

et al. 2023

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Abstractβ-Ga2O3 thin films with both a 45 nm Si-doped conductive epilayer and unintentionally doped epilayer were grown on c-plane sapphire substrate by metalorganic chemical vapor deposition. β-Ga2O3 based metal–oxide–semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 20 nm and 40 nm (it indicated gate depth with 70 nm and 50 nm, respective), respectively, and without said recessing process. The conductivity of β-Ga2O3 epilayers was improved through low in situ doping using a tetraethoxysilane precursor to increase MOSFET forward current density. After recessing, MOSFET operation was transferred from depletion to enhanced mode. In this study, the maximum breakdown voltage of the recessed 40 nm transistor was 770 V. The etching depth of a recessed-gate device demonstrates its influence on device electrical performance.

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Material Properties of n‐Type β‐Ga₂O₃ Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Tarntair,

Huang,

Rana

et al. 2024

Adv Elect Materials

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In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tetraethoxysilane (TEOS) molar flow rate of 2.23 × 10−7 mol min−1 but increased with higher flow rates. The dopant concentrations of Ga2O3 grown at 825 °C with TEOS molar flows of 2.23 × 10−7, 4.47 × 10−7, and 6.69 × 10−7 mol min−1 are measured to be 5.5 × 1019, 1.1 × 1020, and 1.4 × 1020 atom cm−3, respectively, using secondary ion mass spectra and Hall measurements reveal n‐type nature with carrier concentrations of 6.5 × 1017, 3.2 × 1018, and 3.9 × 1018 atom/cm3 , respectively. To increase Si dopant activation, Ga2O3 growth temperature is raised to 875 °C. The result suggests a higher growth temperature can contribute to a greater probability of Si substitution on Ga lattice sites, which further reduces the resistivity of Ga2O3 epilayer. Moreover, results are compared with theoretical Density Functional Theory studies.

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Ion implantation effects on the characteristics of β-Ga2O3 epilayers grown on sapphire by MOCVD

Cited by 9 publications

References 16 publications

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Material Properties of n‐Type β‐Ga₂O₃ Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

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Ion implantation effects on the characteristics of β-Ga2O3 epilayers grown on sapphire by MOCVD

Cited by 9 publications

References 16 publications

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

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Product

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Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Thermodynamics of Ga₂O₃ Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Material Properties of n‐Type β‐Ga₂O₃ Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition