1980
DOI: 10.1109/tmag.1980.1060787
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Ion-implantation conditions and annealing effects for contiguous disk bubble devices

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1983
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Cited by 36 publications
(3 citation statements)
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“…GGG can be grown in such a way as to provide excellent single-crystalline quality. Garnets were intensively studied in the 1980s with the aim of developing magnetic bubble devices [1][2][3][4]. Later on, ion implantation was used for doping garnets with various ions to prepare laser materials [5].…”
Section: Introductionmentioning
confidence: 99%
“…GGG can be grown in such a way as to provide excellent single-crystalline quality. Garnets were intensively studied in the 1980s with the aim of developing magnetic bubble devices [1][2][3][4]. Later on, ion implantation was used for doping garnets with various ions to prepare laser materials [5].…”
Section: Introductionmentioning
confidence: 99%
“…Figure 2 shows AH,, AHo and AH, dependence on Ta in hydrogen atmosphere, [3] where AH, = H, -H,, H, is the resonance field of bulk YIG under the implanted layer, and AHo is the decrease of H, accompanied with the application of the field without light, respectively. AH, is also described as the anisotropy field change AHk [4]. A value of AH0 is determined at the time 60 min.…”
Section: R E S U L T S and Discussionmentioning
confidence: 99%
“…The influence of ion implantation into YIG has been studied extensively from such view points [4][5][6][7][8][9]. The research revealed that hydrogen is one of the most efficient dopants to enhance the effective anisotropy field change of YIG films [4,8] and this beneficial effect fades away after annealing in a nitrogen atmosphere [7]. The latter behavior was attributed to out-diffusion of hydrogen from the YIG lattice.…”
Section: Introductionmentioning
confidence: 99%