2023
DOI: 10.1016/j.mssp.2023.107326
|View full text |Cite
|
Sign up to set email alerts
|

Ion implantation as an approach for tuning of electronic structure, optical, morphological and electrical transport properties of sputtered molybdenum disulfide thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
0
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 64 publications
0
0
0
Order By: Relevance
“…The mobility of charge carriers is reduced due to an increase in scattering leads to a decrease in the conductivity of SiC thin films. In the case of the Si(111) wafer, the observed highest conductivity could be due to its single-crystalline structure and minimal defect density compared to the irradiated SiC thin films [22].…”
Section: Optical Investigations Of Rf Sputtered Sic Over Si(111)mentioning
confidence: 97%
“…The mobility of charge carriers is reduced due to an increase in scattering leads to a decrease in the conductivity of SiC thin films. In the case of the Si(111) wafer, the observed highest conductivity could be due to its single-crystalline structure and minimal defect density compared to the irradiated SiC thin films [22].…”
Section: Optical Investigations Of Rf Sputtered Sic Over Si(111)mentioning
confidence: 97%