Ion flux composition in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 chemistries during silicon etching in industrial high-density plasmas

Cunge, G.; Inglebert, R.L.; Joubert, O.; Vallier, L.; Sadeghi, N.

doi:10.1116/1.1511219

Cited by 82 publications

(85 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7 Three additional ports have been added to the DPS chamber with respect to its standard configuration. 7 Three additional ports have been added to the DPS chamber with respect to its standard configuration.…”

Section: Methodsmentioning

confidence: 99%

Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas

Vallier

Foucher

Detter

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

We have used x-ray photoelectron spectroscopy (XPS) to analyze resist patterned silicon surfaces etched in a commercial 200 mm high density plasma etcher. After anisotropic etching using gate etching chemistries based on HBr/Cl2/O2 gas mixtures with or without CF4 addition, wafers are transferred under vacuum to perform chemical topography analysis using XPS in order to measure the element concentration on the silicon surfaces at the bottom of the trenches as well as the silicon sidewalls. Composition of the layers formed on the silicon sidewalls as a function of the plasma operating conditions is reported and discussed. The sidewall layer formation is mainly attributed to the oxidation of silicon etching by-products and the deposition of fluorocarbon species. Depending on the O2 and CF4 amount during a silicon gate main etch step, composition of the layer can be either SiOx-like or fluorocarbon rich. In all cases, the sidewall layer is transformed into a SiOx material during the subsequent fluorine free soft-landing step, as a result of the direct oxidation of silicon combined with the fluorocarbon species removal by oxygen in the plasma.

show abstract

Section: Methodsmentioning

confidence: 99%

Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas

Vallier

Foucher

Detter

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

show abstract

“…11,12 The DPS is a high-density plasma source where both the source antenna and the bottom electrode are powered. The source consists of a ceramic dome with a radio frequency ͑RF͒ three-dimensional coil configuration around it.…”

Section: A Equipmentmentioning

confidence: 99%

Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy

Pargon¹,

Joubert²,

Xu³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

We have used x-ray photoelectron spectroscopy (XPS) to investigate the resist-patterns’ transformations after exposure to resist trimming plasmas. The influence of the chemistry, the feed gas ratio, the bias power and the pressure have been studied for a Cl2/O2 and a HBr/O2 trim chemistry. An experimental procedure based on the chemical-topography analysis of resist patterns using XPS has been set up to determine the chemical composition and thickness of the reactive layers that are formed both on tops and sidewalls of the resist features during the resist trimming process. The resist modifications obtained by XPS have been correlated with the process performance (trim rate) obtained by SEM observations. In this study, we show that the main difference between HBr/O2 and Cl2/O2 trimming processes is attributed to the difference in reactivity between Br and Cl radicals with the resist during plasma exposure. We succeed in explaining the impact of the plasma parameters (oxygen percentage in the gas phase, bias power, pressure) on the Cl2/O2 trimming process. A decrease in trim rate is well correlated with the formation of a thick and chlorine-rich layer formed on the resist sidewalls.

show abstract

“…They are used mainly as a shield to protect the ceramic parts inside etchers or chemical vapor deposition reactor chambers from corrosion caused by fluorocarbon corrosive gases such as CF 4 , CHF 3 , C 4 F 6 , and C 2 F 6 [3,4,5]. These materials interact with plasma and are eroded, resulting in the production of contaminant particles on the wafer.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

et al. 2017

View full text Add to dashboard Cite

Yttrium fluoride (YF3) and yttrium oxide (Y2O3) protective coatings prepared using an atmospheric plasma spraying technique were used to investigate the relationship between surface erosion behaviors and their nanoparticle generation under high-density plasma (1012–1013 cm−3) etching. As examined by transmission electron microscopy, the Y2O3 and YF3 coatings become oxyfluorinated after exposure to the plasma, wherein the yttrium oxyfluoride film formation was observed on the surface with a thickness of 5.2 and 6.8 nm, respectively. The difference in the oxyfluorination of Y2O3 and YF3 coatings could be attributed to Y–F and Y–O bonding energies. X-ray photoelectron spectroscopy analyses revealed that a strongly fluorinated bonding (Y–F bond) was obtained on the etched surface of the YF3 coating. Scanning electron microscopy and energy dispersive X-ray diffraction analysis revealed that the nanoparticles on the 12-inch wafer are composed of etchant gases and Y2O3. These results indicate that the YF3 coating is a more erosion-resistant material, resulting in fewer contamination particles compared with the Y2O3 coating.

show abstract

Ion flux composition in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 chemistries during silicon etching in industrial high-density plasmas

Cited by 82 publications

References 48 publications

Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas

Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas

Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy

Comparison of Erosion Behavior and Particle Contamination in Mass-Production CF4/O2 Plasma Chambers Using Y2O3 and YF3 Protective Coatings

Contact Info

Product

Resources

About