Abstract-This paper presents experimental results produced by the sol-gel method silica layers usage as dielectric masks in ion exchange processes in producing stripe waveguides. Such layers were produced on the glass substrate (soda-lime glass) by the dip-coating method. Their thicknesses gained during single deposit on the substrate were in the range of 78÷150nm. Those layers had the compactness comparable to thermal silica. The Ag + ↔Na + ion exchange processes with the use of AgNO3/NaNO3 solution with the mole fraction of κAg=0.0025 were completed. The permeability of the layers for dopant ions (Ag + ) depending on the thickness of the layer and the diffusion time was tested.The production of gradient structures of integrated optics with the use of the ion exchange method often requires the use of selective diffusion processes of an ion dopant into the glass substrate. In this way, gradient stripe waveguides are produced, as well as all kinds of diffractive structures (such as microlenses). The processes of selective diffusion of admixture ions into glass require the use of respective masking layers to ensure the blocking of admixture access to the masked areas of glass. Such layers should be chemically resistant to the environment of a liquid source of admixture (these are usually strong oxidizers operating at high temperatures). They must also display good adhesion to the glass surface and be able to undergo photochemical processing (shaping coverage topology). Generally, masking layers used in the ion exchange processes can be distinguished into metallic and dielectric. Most commonly used [1-4] metallic layers (Al, Ti, Cr) are applied on the glass surface by the vacuum evaporation technique. By using photolithographic processes a corresponding pattern is formed in the applied layer exposing the glass surface at selected locations. There is also a possibility of oxidation of the metallic layer with an etched pattern. This technique is applied in aluminum layers by electrolytic oxidation, providing a dielectric layer of Al 2 O 3 . Other dielectric layers that are applied directly by the vacuum evaporation technique or cathode sputtering are: SiO 2 , Ta 2 O 5 . In this paper, we propose the use of silica as a masking layer. Those layers are produced by the sol-gel method. Depending on the manner of their manufacturing process, they may have a different porosity [5]. For applications of such layers as dielectric masks the preference will be the compact layers comparable to thermal silica. The use of such layers as dielectric masks is also possible due to the possibility of chemical etching [6][7] allowing the formation of masking areas topology in ion exchange processes. The following test results are applicable to determine the degree of permeability of the silica layers by using them as masks for ion-exchange processes. The research included thickness of the layers and duration of the processes.The subject of the research was substrate of soda-lime glass (Menzel Glasser's). Completed technological processes...