1980
DOI: 10.1002/sca.4950030401
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Ion etching in metallography

Abstract: Ion etching has proved to be a highly suitable method of preparation for the investigation of special problems in materials. The advantages of ion etching lie especially in the ability to sputter various elements and compounds with differing rates of removal. Reactive sputtering has proved highly suitable for the selective removal of individual structure components. Cathode sputtering is well adapted for the purification of specimens, particularly those with pores and cracks.

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Cited by 7 publications
(4 citation statements)
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“…The metallographic samples for ion etching were prepared according to the method and parameters offered in the reference literatures [14][15][16]. Samples were cut off using an electrosparking machine, and the cross-sections were mechanically ground and polished.…”
Section: Preparation Of Samplesmentioning
confidence: 99%
“…The metallographic samples for ion etching were prepared according to the method and parameters offered in the reference literatures [14][15][16]. Samples were cut off using an electrosparking machine, and the cross-sections were mechanically ground and polished.…”
Section: Preparation Of Samplesmentioning
confidence: 99%
“…Der Atzvorgang findet in einem Vakuum von etwa 6 * lo-' -8 . lo-* Torr statt [5,6]. Im Rahmen einer Gasentladung werden die positiven Ionen des im allgemeinen verwendeten (Rest) Gases Argon gegen die als Kathode geschaltete Probe beschleunigt.…”
Section: Metallographische Atzverfahrenunclassified
“…Abbildung 1 zeigt eine grafische Darstellung der Abhangigkeit der Zerstaubungsausbeute S bei Silber (Ag), Kupfer (Cu) und Molybdan (Mo) von der Energie senkrecht eingeschossener Argonionen Eo nach [5].…”
Section: Metallographische Atzverfahrenunclassified
“…78 collecting aluminum samples @t are cast in the form of an anode suitable for elecmchdcal dissolution in an aqueous elecmlyte. Blectrochemically separating the inclusions by preferentially dissolving the matrix metal.…”
Section: Electrochemlcal Dlssoiutlonmentioning
confidence: 99%