Ion energy and mass distributions of the plasma during modulated pulse power magnetron sputtering

Lin, Jinn; Moore, John J.; Sproul, William D.; Mishra, Brajendra; Rees, J.A.; Wu, Zuoqiang; Chistyakov, Roman; Abraham, Bassam

doi:10.1016/j.surfcoat.2009.05.048

Cited by 109 publications

(73 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…500 ls: Longer pulsed regimes, where the discharge is sustained for several milliseconds, have been achieved when using the modulated pulsed power (MPP) technique, where the duty cycle can reach almost 30% compared to 1-10% for conventional HiPIMS discharges. 76 In general, this limits the peak current that can be achieved FIG. 4.…”

Section: E Pulse Configurationmentioning

confidence: 99%

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

View full text Add to dashboard Cite

High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.Funding Agencies|Swedish Research Council (VR)|623-2009-7348

show abstract

Section: E Pulse Configurationmentioning

confidence: 99%

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

View full text Add to dashboard Cite

show abstract

“…The closest published results deal with modulated pulse power magnetron sputtering where longer pulses (>1ms) and lower current levels are used resulting in less pronounced high energy tails of ionized species [9].…”

Section: Introductionmentioning

confidence: 99%

Time and energy resolved ion mass spectroscopy studies of the ion flux during high power pulsed magnetron sputtering of Cr in Ar and Ar/N2 atmospheres

Greczyński

Hultman

2010

Vacuum

125

View full text Add to dashboard Cite

show abstract

“…Empirically optimized specifics can be stored as recipes for processing. It should be noted that the reactive gas, like nitrogen, is significantly ionized in those long pulses, which is beneficial for the formation of compound films [40].…”

Section: Hipims and Related Plasmasmentioning

confidence: 99%

High power impulse magnetron sputtering and related discharges: Scalable plasma sources for plasma-based ion implantation and deposition

Anders

2010

Surface and Coatings Technology

View full text Add to dashboard Cite

High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using 'gasless' or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated. Introduction: Plasma sources for PBII&DPlasma-based ion implantation and deposition (PBII&D) is a family of surface modification and thin film deposition techniques overlapping with other plasma-based technologies known under various other names. The basic idea is to immerse a substrate in a plasma and apply a usually rather high voltage to it; as a result, a high voltage sheath forms between plasma and substrate, enabling controlled acceleration of plasma ions after they cross the plasma-sheath boundary (sheath edge). Depending on the voltage amplitude and the character of the plasma, ion implantation and/or deposition occurs [1].An early form, or predecessor, of PBII&D is ion plating where metal vapor is partially ionized and the growing metal film is subject of ion bombardment [2]. Instead of trying to ionize atoms from a metal evaporation source, metal plasma can be readily produced using high-current pulsed arc or spark discharges in vacuum [3]. These early, pioneering attempts inspired the much-cited work by Conrad and coworkers [4] who used non-condensable (not film-forming) nitrogen plasma for surface modification: the implantation of nitrogen facilitated the formation of nitrides in the surface layer with the well-known advantageous features of enhanced hardness and improved wear and corrosion resistance.Without further reviewing the many papers that appeared on the subject, one can see that the plasma sources can be generally classified in gaseous and those leading to film growth (condensable, usually containing metal or carbon ions). Gaseous plasma can be further classified in noble and reactive gases, while metal plasmas can be quite different in their properties, especially in terms of ion charge states and ion energy distribution functions. Examples of gas plasma sources include radio-frequency (RF) sources [4][5] and distributed electron cyclotron resonance microwave (DECR) sources [6].

show abstract

Ion energy and mass distributions of the plasma during modulated pulse power magnetron sputtering

Cited by 109 publications

References 35 publications

An introduction to thin film processing using high-power impulse magnetron sputtering

An introduction to thin film processing using high-power impulse magnetron sputtering

Time and energy resolved ion mass spectroscopy studies of the ion flux during high power pulsed magnetron sputtering of Cr in Ar and Ar/N2 atmospheres

High power impulse magnetron sputtering and related discharges: Scalable plasma sources for plasma-based ion implantation and deposition

Contact Info

Product

Resources

About