Ion Chemistry in XH4/Allene (X = Ge, Si) Gaseous Mixtures – Formation of X–C Bonds

Benzi, Paola; Operti, Lorenza; Ragazzoni, Roberto

doi:10.1002/(sici)1099-0682(200003)2000:3<505::aid-ejic505>3.0.co;2-i

Cited by 20 publications

(18 citation statements)

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“…Gas‐phase ion reactivity and reaction mechanisms have been studied and rate constants determined also for binary systems in which silane is mixed with small organic and inorganic molecules. In particular, the SiH 4 –C 2 H 6 , SiH 4 –C 2 H 4 ,SiH 4 –C 2 H 2 ,SiH 4 –C 3 H 8 ,SiH 4 –C 3 H 6 and SiH 4 –C 3 H 4 (allene) systems have been considered12–15 also in relation to the deposition of amorphous silicon carbides of interest in the photovoltaic field. SiH 4 –NH 3 and SiH 4 –PH 3 mixtures have been studied to investigate the formation of new Si—N and Si—P bonds, nitrogen and phosphorus being doping elements in semiconductor materials 16, 17.…”

Section: Introductionmentioning

confidence: 99%

Gas‐phase ion chemistry in the ternary SiH₄–C₃H₆–PH₃ system

et al. 2001

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Propene-phosphine and the silane-propene-phosphine gaseous mixtures were studied by ion trap mass spectrometry. For the binary mixture the variation of ion abundances under different partial pressures and the mechanisms of ion-molecule reactions are reported. Moreover, the rate constants of the main processes were measured and compared with the collisional rate constants to determine the reaction efficiencies. In the ternary silane-propene-phosphine mixture the mechanisms of formation of Si(m)C(n)P(p)H(+)(s) ion clusters were elucidated, but the complexity of the system and the low abundances of the ions usually isolated by successive steps prevented the determination of rate constants. The hydrogenated ternary ions are mainly formed by reactions of Si(r)P(s)H(+)(t) ions with propene, whereas a minor contribution comes from reactions of Si(m)C(n)H(+)(p) ions with phosphine. The C(v)P(w)H(+)(z) ions show very low reactivity with silane. The formation processes of these species are discussed in relation to their possible role as precursors of amorphous silicon carbides doped with phosphorus obtained by deposition from properly activated silane-propene-phosphine mixtures.

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Section: Introductionmentioning

confidence: 99%

Gas‐phase ion chemistry in the ternary SiH₄–C₃H₆–PH₃ system

et al. 2001

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“…[1] Thus, over the years, the gasphase ion chemistry of binary and ternary mixtures containing SiH 4 and hydrogen, [2] hydrocarbons, [3][4][5][6][7][8][9][10][11][12][13][14][15][16] water, [17] inorganic oxides, [18,19] ammonia, [20][21][22][23][24] phosphine, [25][26][27][28][29] and halocarbons [30][31][32] was investigated by various experimental and theoretical methods. [1] Thus, over the years, the gasphase ion chemistry of binary and ternary mixtures containing SiH 4 and hydrogen, [2] hydrocarbons, [3][4][5][6][7][8][9][10][11][12][13][14][15][16] water, [17] inorganic o...…”

Section: Introductionmentioning

confidence: 99%

“…The gas-phase reactions of the cationic silicon hydrides SiH n þ (n ¼ 0-3) are of interest for fundamental reasons, and also to appreciate the role of ionic processes in the chemical vapor deposition of electronic and optoelectronic materials from gaseous mixtures containing SiH 4 . [1] Thus, over the years, the gasphase ion chemistry of binary and ternary mixtures containing SiH 4 and hydrogen, [2] hydrocarbons, [3][4][5][6][7][8][9][10][11][12][13][14][15][16] water, [17] inorganic oxides, [18,19] ammonia, [20][21][22][23][24] phosphine, [25][26][27][28][29] and halocarbons [30][31][32] was investigated by various experimental and theoretical methods. More recently, ion trap mass spectrometry (ITMS) and ab initio calculations were used to study the reactions occurring in ionized mixtures of SiH 4 and NF 3 .…”

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confidence: 99%

Gas‐phase reactions of SiH_n⁺ (n = 1,2) with NF₃: A computational investigation on the detailed mechanistic aspects

et al. 2012

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The mechanism of the gas-phase reactions of SiH(n)(+) (n = 1,2) with NF(3) were investigated by ab initio calculations at the MP2 and CAS-MCSCF level of theory. In the reaction of SiH(+), the kinetically relevant intermediates are the two isomeric forms of fluorine-coordinated intermediate HSi-F-NF(2)(+). These species arise from the exoergic attack of SiH(+) to one of the F atoms of NF(3) and undergo two competitive processes, namely an isomerization and subsequent dissociation into SiF(+) + HNF(2) , and a singlet-triplet crossing so to form the spin-forbidden products HSiF(+) + NF(2). The reaction of SiH(2)(+) with NF(3) involves instead the concomitant formation of the nitrogen-coordinated complex H(2)Si-NF(3)(+) and of the fluorine-coordinated complex H(2)Si-F-NF(2)(+). The latter isomer directly dissociates into NF(2)(+) + H(2)SiF, whereas the former species preferably undergoes the passage through a conical intersection point so to form a H(2) SiF-NF(2)(+) isomer, which eventually dissociates into H(2)SiF(+) and NF(2).

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“…, ethylene145 , allene146,150 and alkynes. Primary ions of germane undergo very slow reaction with methane and ethane and experiments carried out under methane or ethane chemical ionization conditions reveal the formation of small amounts of GeCH 5 + , GeCH 7 + and GeC 2 H 9 + as the result of tertiary reactions146 .…”

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Gas‐Phase Chemistry and Mass Spectrometry ofGe‐,Sn‐ andPb‐Containing Compounds

Riveros

Takashima

2009

Patai's Chemistry of Functional Groups

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Introduction Mass Spectrometry of Ge , Sn and Pb Derivatives Gas‐Phase Ion Chemistry Gas‐Phase Chemistry of Neutral Ge , Sn and Pb Species Acknowledgments

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Ion Chemistry in XH4/Allene (X = Ge, Si) Gaseous Mixtures – Formation of X–C Bonds

Cited by 20 publications

References 35 publications

Gas‐phase ion chemistry in the ternary SiH₄–C₃H₆–PH₃ system

Gas‐phase ion chemistry in the ternary SiH₄–C₃H₆–PH₃ system

Gas‐phase reactions of SiH_n⁺ (n = 1,2) with NF₃: A computational investigation on the detailed mechanistic aspects

Gas‐Phase Chemistry and Mass Spectrometry ofGe‐,Sn‐ andPb‐Containing Compounds

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Ion Chemistry in XH4/Allene (X = Ge, Si) Gaseous Mixtures – Formation of X–C Bonds

Cited by 20 publications

References 35 publications

Gas‐phase ion chemistry in the ternary SiH4–C3H6–PH3 system

Gas‐phase ion chemistry in the ternary SiH4–C3H6–PH3 system

Gas‐phase reactions of SiHn+ (n = 1,2) with NF3: A computational investigation on the detailed mechanistic aspects

Gas‐Phase Chemistry and Mass Spectrometry ofGe‐,Sn‐ andPb‐Containing Compounds

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Gas‐phase ion chemistry in the ternary SiH₄–C₃H₆–PH₃ system

Gas‐phase ion chemistry in the ternary SiH₄–C₃H₆–PH₃ system

Gas‐phase reactions of SiH_n⁺ (n = 1,2) with NF₃: A computational investigation on the detailed mechanistic aspects