Ion bombardment induced photon and Auger emission for surface analysis

Thomas, Edward

doi:10.1016/0042-207x(84)90221-5

Cited by 63 publications

(3 citation statements)

References 90 publications

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“…Through crossing of the molecular orbitals, innershell vacancies are produced. [18][19][20] In IAE spectrum measurements, Si and Al are the most popular samples because of their high Auger yield compared with heavier elements. These sharp peaks originate from excited atoms or ions with inner shell vacancies which are ejected into the vacuum through ion bombardment.…”

Section: Two-dimensional Elemental Mapping With Auger Electrons Inmentioning

confidence: 99%

Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materials

Cheng

Sakamoto

Takahashi

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Development and instrumentation of an integrated three-dimensional optical testing system for application in integrated circuit packaging Rev. Sci. Instrum. 76, 093109 (2005); 10.1063/1.2042647 Fabrication of three-dimensional microstructures by two-dimensional slice by slice approaching via focused ion beam milling Use of the focused ion beam to locate failure sites within electrically erasable read only memory microcircuits J. Vac. Sci. Technol. A 22, 902 (2004); 10.1116/1.1651542Reconstruction of three-dimensional chemistry and geometry using focused ion beam microscopyWe constructed an ion and electron dual focused beam apparatus to develop a novel three-dimensional ͑3D͒ microanalysis technique. In this method, a Ga focused ion beam ͑Ga FIB͒ is used as a tool for successive cross sectioning of the sample in the ''shave-off'' mode, while an electron beam ͑EB͒ is used as a primary probe for Auger mapping of the cross sections. Application of postionization with EB to Ga-FIB secondary ion mass and two-dimensional ͑2D͒ elemental mapping with Ga-FIB-induced Auger electrons are also in the scope of the apparatus. The 3D microanalysis was applied to a bonding wire on an integrated circuit ͑IC͒. A series of EB-induced sample current images of the successive cross sections were obtained as a function of the cross-sectioning position. This result showed the capability to realize the 3D Auger microanalysis. Two-dimensional elemental mapping with Ga-FIB-induced Auger electrons was realized for the first time on the IC surface. Its applicability to surface analysis was evaluated.

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Section: Two-dimensional Elemental Mapping With Auger Electrons Inmentioning

confidence: 99%

Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materials

Cheng

Sakamoto

Takahashi

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…These topics have included electronics and metallurgy (B6), adhesion, corrosion, and catalysis (137), fracture surfaces (B8), glass surfaces (B9), and a comparison of AES and secondary mass ion spectrometry (SIMS) (B10), Ion-induced Auger electron emission will not be treated in this review. Reviews of this topic have appeared recently (Bll,B12). A comparison of electron vs. ion beam excitation Auger spectroscopy has been made (B13).…”

Section: Introductionmentioning

confidence: 99%

Surface analysis: x-ray photoelectron spectroscopy and Auger electron spectroscopy

Turner¹

1986

Anal. Chem.

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“…Secondary ion mass spectroscopy (SIMS), which identifies the ejected particles by their mass, is the most sensitive technique. Optical spectroscopy [1][2][3][4][5][6][7], which uses the light emitted by excited particles, has other advantages. Identification by a set of atomic lines is devoided of ambiguity.…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Sputtering Monitored by Optical Spectroscopy

Fqih

Fournier

2009

Acta Phys. Pol. A

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Optical spectroscopy gives a simple means to follow the evolution of the surface composition during ion beam sputtering. This is illustrated by three examples: air oxidised metals (Al and Cu), various CuAl alloys and the Cu 98 Be 2 alloy. Several time scales are distinguished, corresponding to different processes: the elimination of surface contaminants, the removal of the corroded layer. The implications for the use of ion beam optical spectroscopy in surface analysis are discussed.

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Ion bombardment induced photon and Auger emission for surface analysis

Cited by 63 publications

References 90 publications

Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materials

Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materials

Surface analysis: x-ray photoelectron spectroscopy and Auger electron spectroscopy

Ion Beam Sputtering Monitored by Optical Spectroscopy

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