Ion Bombardment Enhanced Selective Etching of Garnets

Tsurushima, T.; Tanoue, H.; Funabashi, Hideo

doi:10.1541/ieejfms1972.96.527

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1983

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“…This technique is useful for various materials and has been applied to various materials such as Si, Si0 2 , [2,3], garnet [4] or LiNb0 3 [5].…”

Section: Introductionmentioning

confidence: 99%

Maskless Patterning of Cr Films Using Focused Ion Beams

et al. 1983

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Characteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated.Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CC1 4 were measured.Sb profiles were also measured by Rutherford backscattering techniques.It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation.It was also fotind that a latent image of an Sb implanted pattern at a dose Ž 3.8x10 5 /cm 2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

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“…This technique is useful for various materials and has been applied to various materials such as Si, Si0 2 , [2,3], garnet [4] or LiNb0 3 [5].…”

Section: Introductionmentioning

confidence: 99%