2005
DOI: 10.1109/tps.2005.860086
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Ion beams and their applications in high-resolution probe formation

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Cited by 11 publications
(6 citation statements)
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“…The main disadvantages of this source are the internal cathodic element ͑limiting life and the number of available gas/ion species͒ and the marginal brightness for high current applications. Many other groups have also reported advances in plasma ion source brightness, [5][6][7] anticipating unprecedented small spot sizes from theoretical spot size calculations.…”
Section: ͑6͒mentioning
confidence: 99%
“…The main disadvantages of this source are the internal cathodic element ͑limiting life and the number of available gas/ion species͒ and the marginal brightness for high current applications. Many other groups have also reported advances in plasma ion source brightness, [5][6][7] anticipating unprecedented small spot sizes from theoretical spot size calculations.…”
Section: ͑6͒mentioning
confidence: 99%
“…With argon a maximum reduced brightness of 10 3 A m À2 sr À1 V À1 with DE = 4.5 eV has been achieved [18], while with H À a pulsed (1% duty factor) brightness of 7 Â 10 4 A m À2 sr À1 V À1 and an energy spread of 3 eV were possible, however, the time averaged reduced brightness is still only 700 A m À2 sr À1 V À1 . For O À , Guharay reports a factor of 4 reduction in brightness over H À [19], resulting in a time averaged brightness of only 175 A m À2 sr À1 V À1 . This performance with O À is factor of 3-5 higher than typical Duoplasmatrons and for pulsed applications, the Penning source could be an interesting option.…”
Section: Introductionmentioning
confidence: 99%
“…The application of focused ion beam (FIB) implantation in many fields of research results in a continuous demand for appropriate ions. These ions can be delivered by liquid metal ion sources (LMIS) and mainly by liquid alloy ion sources (LAIS) for long operating times (Guharay and Orloff 2005). Currently there is increasing interest in the implantation of magnetic ions, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…The difference in m/q (m: mass, q: charge number) between the two peaks amounts to only 0.169. This source works in a stable way down to a minimum source current of 0.5 µA and its Co + peak was successfully used for the implantation of cobalt into silicon for the preparation of cobalt silicide structures (Fuhrmann 2000). For the production of dysprosium and nickel ions Melnikov et al (2002) developed a Dy-Ni LAIS and found Dy ++ as the main component in the beam.…”
Section: Introductionmentioning
confidence: 99%
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