2006
DOI: 10.1016/j.tsf.2005.12.223
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Ion beam synthesis of the diamond like carbon films for nanoimprint lithography applications

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Cited by 39 publications
(16 citation statements)
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“…[9] Subsequently, the same group of researchers carried out a study on the ion beam synthesis of undoped and doped hydrogenated DLC films for nanoimprint lithography applications. [10] Most recently, Zhou et al reported the improved properties of nitrogen-doped DLC films in relation to carbon films discussing the potential of these materials for optical, electrical and mechanical applications. [11] The effect of nitrogen incorporation on the electrical conductivity of amorphous carbon has been explained by two different mechanisms: electronic doping and band-gap reduction caused by the DLC graphitization.…”
Section: Introductionmentioning
confidence: 99%
“…[9] Subsequently, the same group of researchers carried out a study on the ion beam synthesis of undoped and doped hydrogenated DLC films for nanoimprint lithography applications. [10] Most recently, Zhou et al reported the improved properties of nitrogen-doped DLC films in relation to carbon films discussing the potential of these materials for optical, electrical and mechanical applications. [11] The effect of nitrogen incorporation on the electrical conductivity of amorphous carbon has been explained by two different mechanisms: electronic doping and band-gap reduction caused by the DLC graphitization.…”
Section: Introductionmentioning
confidence: 99%
“…It should be acknowledged, though, that the thickness of DLC films is limited due to their adhesive properties [39].…”
Section: Influence Of Protective Layer To the Scattering Dose In Simentioning
confidence: 99%
“…SiO x containing a-C:H films are characterized through reduced stress, as compared to undoped a-C:H films, radiation hardness, low wear, good adhesion, thermal stability [1][2][3] and are very promising as protective optical coatings. Adding of the small amount of nitrogen to the total gas flow is enough to increase optical transmittance of SiO x doped DLC films in the range of the wave length shorter than 450 nm (range corresponding to the highest UV absorption of the UV resists) [4]. Another possibility to modify DLC film properties is additional energy transfer to the target by laser [5] or X-ray photon irradiation.…”
Section: /Spmentioning
confidence: 99%
“…Promising features of modified amorphous DLC structures deposited at 240eV could be used producing anti-sticking layers for UV imprint lithography applications as it was proposed in [4].…”
Section: /Spmentioning
confidence: 99%