Ion beam synthesis and characterization of thin SiC surface layers

Theodossiu, E.; Baumann, H.; Polychroniadis, E.K.; Bethge, Κ.

doi:10.1016/s0168-583x(99)00843-5

Cited by 16 publications

(5 citation statements)

References 15 publications

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“…In this article we report on the formation of a thin a-Si 3 N 4 surface layer after implantation of 60 keV nitrogen ions into silicon, when the implanted sample was thermally treated under high vacuum conditions. This work continues a former investigation, which demonstrated that thin b-SiC surface layers on silicon are formed by carbon implantation into silicon and subsequent thermal treatment under high vacuum conditions [18][19][20]. This formation process is caused by the process of active oxidation of silicon.…”

Section: Introductionsupporting

confidence: 80%

“…The alteration of the 15 N depth profile during the thermal treating, from a Gaussianlike nitrogen depth distribution into a rectangular one, was also observed on carbonimplanted silicon samples being subsequently thermally treated just as under high vacuum conditions with scanned 20 keV electron beam [18][19][20]. It was demonstrated, that the carbon redistribution was not the result of a diffusion process, but of silicon etching as shown by an experiment with a depth marker [18].…”

Section: Resultsmentioning

confidence: 79%

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Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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A thin Si3N4 surface layer is formed by implantation of 60 keV 15N nitrogen ions into single‐crystalline silicon 〈100〉 with a fluence of 5.6 × 1017 ions/cm2 and subsequent annealing (1295 °C, 15 min) under high vacuum conditions. The 15N depth distribution is measured with the resonant nuclear reaction 15N(p, αγ)12C. The formation of Si‐N bonds is proven by Fourier transform infrared spectroscopy using samples implanted with 14N ions and 15N ions, respectively. The crystallinity of the Si3N4 surface layer is studied by X‐ray diffraction and transmission electron microscopy. The annealing process leads to the formation of a polycrystalline α‐Si3N4 surface layer with a thickness of 90 nm. The analysis of high resolution TEM micrographs shows that the layer is split into two sublayers both consisting of single α‐Si3N4 crystals with lateral extension up to 500 nm.

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Section: Introductionsupporting

confidence: 80%

Section: Resultsmentioning

confidence: 79%

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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“…For annealing above 900 °C we expect crystallization of amorphous SiC, as reported for the case of implantation in single films [20,21]. Fig.…”

Section: Annealing At 1000 °Csupporting

confidence: 59%

“…So far, it was shown in Refs. [20,21] that annealing at temperatures lower than 800-850 °C do not appreciably changes the carbon distribution in thick Si films when implanted by 10-40 keV carbon ions. In those conditions, thick (100 nm) poly-crystalline carbide films could only be obtained (by high-temperature >1000 °C annealing).…”

Section: Discussionmentioning

confidence: 96%

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

Dobrovolskiy

Yakshin

Tichelaar

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…This shift does not favour some of the previously observed results [27]. The migration of the C profile is accompanied by a decrease in the backscattering yield at the maximum of the C profile, indicating depletion of C as a result of SiC formation which has also been observed by Theodossiu et al [28]. The shift is almost the same for both Si (100) and Si (111) substrates.…”

Section: Rbs Analysissupporting

confidence: 46%

Synthesis of buried SiC using an energetic ion beam

Katharria¹,

Kumar²,

Singh³

et al. 2006

J. Phys. D: Appl. Phys.

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Buried silicon carbide (SiC) was synthesized at room temperature using implantation of 150 keV C+ ions in n-type Si (100) and Si (111) substrates. The dose of implanted C+ was varied from 4 × 1017 to 8 × 1017 cm−2. Post-implantation annealing at 1000° C for 30 min was carried out in inert ambience. Rutherford backscattering spectroscopy, x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy were employed to characterize the samples. FTIR and Raman spectroscopic techniques in combination with the XRD analysis confirmed the development of the β-SiC phase in the samples. The average size of the SiC precipitates was estimated to be 9 nm from XRD analysis.

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Ion beam synthesis and characterization of thin SiC surface layers

Cited by 16 publications

References 15 publications

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

Synthesis of buried SiC using an energetic ion beam

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