Ion beam nanopatterning and micro-Raman spectroscopy analysis on HOPG for testing FIB performances

Archanjo, Bráulio S.; Maciel, Indhira O.; Ferreira, Erlon H. Martins; Peripolli, S.; Damasceno, J. C.; Achete, Carlos A.; Jório, Ado

doi:10.1016/j.ultramic.2011.04.007

Cited by 16 publications

(11 citation statements)

References 21 publications

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“…Figure 1 . Furthermore, it confirms that Raman spectroscopy is sensitive even to small amounts of defects, as has been shown for graphite, 21 and Raman spectroscopy is therefore an ideal tool to investigate the influence of small amounts of scattered ions. After 10 13 ions/cm 2 the D and G peaks start to broaden and merge together into a single broad feature, indicative of amorphous carbon.…”

supporting

confidence: 73%

The effect of residual gas scattering on Ga ion beam patterning of graphene

Thissen

Vervuurt

Mulders³

et al. 2015

Applied Physics Letters

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The patterning of graphene by a 30 kV Ga+ focused ion beam (FIB) is studied by in-situ and ex-situ Raman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account.

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supporting

confidence: 73%

The effect of residual gas scattering on Ga ion beam patterning of graphene

Thissen

Vervuurt

Mulders³

et al. 2015

Applied Physics Letters

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“…Our results follow a similar increase as a function of ion dose and the trend towards saturation at high ion doses. Therefore, we can conclude that this ion dose range makes graphite highly defective …”

Section: Resultsmentioning

confidence: 80%

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Rodriguez

Khan

et al. 2019

Physica Status Solidi (a)

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Carbon nanomaterials are important for future sensors and electronics. Defects determine the material properties, therefore, it is critical to find new ways to investigate defects at the nanoscale. In this context, Raman spectroscopy (RS) is the tool of choice to study defects in carbon nanomaterials. On the other hand, Kelvin probe force microscopy (KPFM) provides structural and surface potential information at the nanoscale. Here, the authors demonstrate the synergistic application of these methods in the investigation of ion-beaminduced defects in graphite. KPFM and RS imaging are used for visualizing ioninduced defects in a wide range of ion doses from 10 10 to 10 16 ions cm À2 . For the lower range of ion dose, the authors find that RS provides image contrast for the different defect regions in graphite up to a dose of 5 Â 10 13 ions cm À2 . For higher doses, the sp 2 carbon concentration becomes so small that the Raman spectra get dominated by broad amorphous carbon bands. For this dose range, the KPFM contrast allows the defective regions to be differentiated. This contrast in KPFM originates from sp 3 carbons that act as charge traps. The results show that KPFM and Raman microscopy make a powerful and necessary combination for studying the spatial distribution of defects in carbon.

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“…The width of a Raman band can be directly correlated with the degree of disorder in a material [54]. In a graphene sample with point defects caused by ion bombardment [55,56], one can see the width of all Raman bands increasing with the density of defects; for nanocrystalline graphite, one can measure the mean crystallite size of a sample by the value of W(G) [57]. In Table 2, both W(D) and W(G) in the GO-Ca and GO-Ca(H 2 O) samples are larger than the same parameters of the original GO sample, indicating that the incorporation of Ca induces more disorder in the material.…”

Section: Raman Spectroscopymentioning

confidence: 99%