Ion Beam Methods

Gustafsson, T.; Garfunkel, Eric; Schulte, W.; Busch, B.

doi:10.1201/9780203904541.ch28

Cited by 4 publications

(5 citation statements)

References 1 publication

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“…According to the diffusion model [24], the silicon oxide layer can be formed in the reaction between the silicon substrate and oxygen that can diffuse through the growing HfO 2 film. Therefore, the thickness of the interfacial silicon oxide layer should depend on the deposition temperature and the duration of the growth process (i.e.…”

Section: Article In Pressmentioning

confidence: 99%

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Aarik

Sundqvist

Kukli

et al. 2005

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 99%

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Aarik

Sundqvist

Kukli

et al. 2005

Journal of Crystal Growth

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“…Although silicon oxidation at low pressures is generally very slow, it has been observed to increase when covered by a thin layer of a more reactive cation component, which appears to catalyze the oxidation process (17). Thus the goal to oxidize the Si at relatively low temperatures and pressures is realistic.…”

Section: Rock Salt Ba 1-x Sr X O Epitaxial Growth and Stabilitymentioning

confidence: 98%

Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes

et al. 2006

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Silicon on insulator (SOI) substrates will be required to reduce capacitive coupling and other parasitic effects as device scaling continues. ITRS projections point to a future need for SOI buried oxide layers as thin as 10 nm, and Si channel thickness potentially as low as 5 nm for fully- depleted ultra-thin-body devices. For such thin layers, conventional SOI fabrication processes become increasingly difficult. Progress towards fabricating ultra-thin SOI on Si (001) through an all-growth approach is presented. All steps are performed sequentially in situ, with no wet chemical processing. Starting with a Si wafer as large as 8 , our approach is to: 1) deposit a thin commensurate epitaxial oxide layer such as Ca1-xSrxTiO3; 2) oxidize to grow an interface SiO2 layer ('floating' the epitaxial oxide) for stress relief and lowering of the dielectric constant; and 3) deposit epitaxial Si or Si1-xGex to complete the fabrication process.

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“…Due to this ambiguity, the sensitivity is limited to the percent range for light element detection by RBS analysis, and hydrogen is not detectable at all. Under certain circumstances, the sensitivity for light elements can be improved about 10 times compared to standard RBS when amorphous layers on crystalline substrates are analyzed as is common for oxides or nitrides on silicon [6,7]. The silicon signal from the silicon wafer is reduced under channeling conditions while the elements from the amorphous cover layer give the full signal.…”

Section: Rutherford Backscattering Spectrometry Versus Elastic Recoilmentioning

confidence: 99%

Doping Density Depth Profiling Analysis with High Resolution Elastic Recoil Detection

Bergmaier¹,

Dollinger²

2007

ECS Trans.

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The quantitative analysis of light elements in ultra thin films thinner than 10 nm is still a nontrivial task. This paper summarizes the prospects of high-resolution Elastic Recoil Detection (ERD) using a Q3D magnetic spectrograph. It is shown that sub-nanometer resolution can be achieved in ultra thin films and even monolayer resolution is possible close to the surface. ERD has the best quantification possibilities compared to any other method. Sensitivity is sufficient to analyze main elements and impurities as e.g. necessary for the characterization of microelectronic materials. In addition, high-resolution channeling ERD can be performed in order to obtain information on lattice location of light elements in crystalline ultra thin layers. The potential of high-resolution ERD is demonstrated by several applications where it is the most valuable tool for elemental profiling.

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Ion Beam Methods

Cited by 4 publications

References 1 publication

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes

Doping Density Depth Profiling Analysis with High Resolution Elastic Recoil Detection

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