Ion beam lithography for direct patterning of high accuracy large area X-ray elements in gold on membranes

Nadzeyka, Achim; Peto, Lloyd; Bauerdick, S.; Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Weigand, Markus; Hirscher, Michael; Schütz, Gisela

doi:10.1016/j.mee.2012.07.036

Cited by 20 publications

(26 citation statements)

References 6 publications

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“…Considering the limitation of the producible aspect ratio, it follows that IBL applies primarily to the fabrication of soft X-ray zone plates, where both appropriate efficiency and high resolution can be provided. For example, a 100 nm imaging resolution Fresnel zone plate was demonstrated by Nadzeyka et al [135], as shown in Figure 6. The 100 m diameter zone plate was produced in a 500 nm thick, sputter-deposited gold layer, on a 500 nm thick Si 3 N 4 membrane, in a 15 hour-long milling process.…”

Section: Zone Platesmentioning

confidence: 91%

“…Automated drift correction, in which a fiducial marker (reference point) is visited periodically for detecting and correcting shift in positioning, should take care of minimal charging issues and instrument positional drift in general. Also see [135,164,165] The unavoidable but limitable and sometimes curable side effect of ion beam processing is the undesired change of atomic order in the interaction volume. In particular at higher beam energies, the collision cascade can reach deeper and wider (see Figure 1 for a reference in silicon) There are four aspects of dealing with knock-on-damage.…”

Section: Charging and Positional Driftmentioning

confidence: 99%

“…This plate was tested and shown to provide 100 nm imaging resolution when used with 1200 eV X-rays. Reprinted from[135].…”

mentioning

confidence: 99%

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Direct-Write Ion Beam Lithography

Joshi‐Imre

Bauerdick

2014

Journal of Nanotechnology

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Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techniques, such as ion implantation- and ion damage-based patterning and surface functionalization types of processes that have emerged as valuable additions to the nanofabrication toolkit and that are less widely known. While fabrication throughput, in general, is arguably low due to the serial nature of the direct-writing process, speed is not necessarily a problem in these IBL applications that work with small ion doses. Here we provide a comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date. Special attention is given to applications in nanofabrication.

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Section: Zone Platesmentioning

confidence: 91%

Section: Charging and Positional Driftmentioning

confidence: 99%

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Direct-Write Ion Beam Lithography

Joshi‐Imre

Bauerdick

2014

Journal of Nanotechnology

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“…This is very appealing for photonics community that demonstrates a growing interest in planar optical elements endowed with subwavelength features -so called metasurfaces [38,39]. Metasurfaces are sought for topological shaping of light, especially at small scale and many applications of arbitrary shaped slits to control and reshape light field have already been reported [40,21,41]. Although planar optical elements are very attractive for their small footprint and ability to be integrated on various photonic chips, the used metal films are usually thin (< 100 nm) and do not completely block the background light.…”

Section: Direct Fitting Of the Afm Profilesmentioning

confidence: 99%

Nano-proximity direct ion beam writing

Seniutinas

Gervinskas

Anguita³

et al. 2016

Nanofabrication

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Nanofabrication 2015; 2: 54-62 the required resolution and footprint of structures these two techniques can be complemented making pattern over-lays [1]. However, both EBL and photolithography have limitations due to several processing steps of resist exposure, etching, metallization required to make a final device. These limitations were overcome with an emergence of focused ion beam lithography (IBL) which enables direct 3D writing. Even though focused ion beam (FIB) milling technology was first demonstrated in the mid-1970s [2,3], it is still mainly used for sample slicing and lamella preparation for transmission electron microscopy.Among several reasons, lack of stable ion sources has hindered FIB applications in high resolution large scale fabrication, especially where He ion sources are implemented. Nonetheless novel ion sources and column geometries providing high temporal beam stability have been developed over the last decade and opened new avenues for the direct writing at the nanoscale. Stateof-the-art ion beam lithography tools are capable of patterning relatively large areas with cross sections of 100 × 100 μm 2 in tens of minutes [4] depending on complexity and are comparable in speed with mature EBL which is producing 22-nm node lithography masks for the latest microelectronics industry at a throughput ̴ 5 × 10 5 μm 2 h -1 [5]. High precision direct IBL writing found its way in application fields of photonic crystals [6], single molecule sensors [7], nanopores for DNA probing [8,9] to mention a few. Recent development of new Au, Si, Ge ion sources allows not only milling but also a controlled implantation useful for other nanoscale etching and material growth techniques [10][11][12].In plasmonics and nano-photonics, IBL is often used for fabrication/reshaping of nanoscale antennas for the light field confinement and enhancement [13,14] as well as for milling metasurfaces into metal layers [15,16]. Material properties are altered by projectile ion implantation (usually Ga + ) around the cuts and this dampens plasmonic or optical resonances of the fabricated structures. With Abstract: Focused ion beam (FIB) milling with a 10 nm resolution is used to directly write metallic metasurfaces and micro-optical elements capable to create structured light fields. Surface density of fabricated nano-features, their edge steepness as well as ion implantation extension around the cut line depend on the ion beam intensity profile. The FIB beam intensity cross section was evaluated using atomic force microscopy (AFM) scans of milled line arrays on a thin Pt film. Approximation of two Gaussian intensity distributions describes the actual beam profile composed of central high intensity part and peripheral wings. FIB fabrication reaching aspect ratio of 10 in gold film is demonstrated.

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“…First attempt of FZP preparation proved to be difficult and till very recently the imaging properties of the prepared FZPs had not been tested [28][29][30]. Nevertheless recently, we could show that FZPs with good imaging properties can indeed be prepared with IBL and features as small as 120 nm could be resolved in the soft X-rays range at 1200 eV [31]. Other IBL prepared FZPs with resolutions of about 172 nm and their utilization as objective lens in a full field laboratory microscope in the extreme UV range at 13 nm wavelength (95 eV) were also reported a few months later [32].…”

Section: Ion Beam Lithography As Manufacturing Technique For Fresnel mentioning

confidence: 99%

Ion beam lithography for Fresnel zone plates in X-ray microscopy

Keskinbora¹,

Grévent²,

Bechtel³

et al. 2013

Opt. Express

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Fresnel Zone Plates (FZP) are to date very successful focusing optics for X-rays. Established methods of fabrication are rather complex and based on electron beam lithography (EBL). Here, we show that ion beam lithography (IBL) may advantageously simplify their preparation. A FZP operable from the extreme UV to the limit of the hard X-ray was prepared and tested from 450 eV to 1500 eV. The trapezoidal profile of the FZP favorably activates its 2 nd order focus. The FZP with an outermost zone width of 100 nm allows the visualization of features down to 61, 31 and 21 nm in the 1 st , 2 nd and 3 rd order focus respectively. Measured efficiencies in the 1 st and 2 nd order of diffraction reach the theoretical predictions. References and links1. D. T. Attwood, Soft X-rays and extreme ultraviolet radiation (Cambridge University Press, 1999). 2. A. Sakdinawat and D. Attwood, "Nanoscale X-ray imaging," Nature Photonics 4, 840-848 (2010). 3. R. Falcone, C. Jacobsen, J. Kirz, S. Marchesini, D. Shapiro, and J. Spence, "New directions in X-ray microscopy," Contemp. Phys. 52, 293-318 (2011). 4. B. Kaulich, P. Thibault, A. Gianoncelli, and M. Kiskinova, "Transmission and emission x-ray microscopy: operation modes, contrast mechanisms and applications," J. (12) in this article (equation (13) and (14)

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Ion beam lithography for direct patterning of high accuracy large area X-ray elements in gold on membranes

Cited by 20 publications

References 6 publications

Direct-Write Ion Beam Lithography

Direct-Write Ion Beam Lithography

Nano-proximity direct ion beam writing

Ion beam lithography for Fresnel zone plates in X-ray microscopy

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